IMT4-7-F

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - Bipolar (BJT) - Arrays

Weight :

29.993795mg

Number of Terminations :

6

Collector Base Voltage (VCBO) :

120V

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

6

Transition Frequency :

140MHz

Number of Elements :

2

Max Collector Current :

50mA

Polarity :

PNP

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Vce Saturation (Max) @ Ib, Ic :

500mV @ 1mA, 10mA

Base Part Number :

MT4

Mount :

Surface Mount

Height :

1.1mm

Max Power Dissipation :

225mW

Pin Count :

6

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

DC Current Gain (hFE) (Min) @ Ic, Vce :

180 @ 2mA 6V

Current - Collector Cutoff (Max) :

500nA ICBO

Power Dissipation :

225mW

Transistor Element Material :

SILICON

Transistor Type :

2 PNP (Dual)

ECCN Code :

EAR99

Terminal Form :

Gull wing

Emitter Base Voltage (VEBO) :

5V

Frequency :

140MHz

Width :

1.6mm

Gain Bandwidth Product :

140MHz

hFE Min :

180

Collector Emitter Breakdown Voltage :

120V

Published :

2007

Length :

3mm

RoHS Status :

ROHS3 Compliant

Package / Case :

SOT-23-6

Collector Emitter Voltage (VCEO) :

120V

JESD-609 Code :

e3

Mounting Type :

Surface Mount