IMH8AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Resistor - Base (R1) :

10k Ω

Power Dissipation :

300mW

Pbfree Code :

yes

Terminal Finish :

TIN SILVER COPPER

Pin Count :

6

Published :

2008

ECCN Code :

EAR99

Collector Emitter Saturation Voltage :

300mV

Height :

1.2mm

Number of Pins :

74

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Voltage - Rated DC :

50V

Continuous Collector Current :

100mA

Transition Frequency :

250MHz

Max Breakdown Voltage :

50V

Width :

1.8mm

Vce Saturation (Max) @ Ib, Ic :

300mV @ 1mA, 10mA

Additional Feature :

Digital

Length :

3mm

Packaging :

Tape and Reel (TR)

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Max Power Dissipation :

300mW

Terminal Form :

Gull wing

Polarity :

NPN

JESD-609 Code :

e1

Radiation Hardening :

No

Current Rating :

100mA

Peak Reflow Temperature (Cel) :

260

Number of Elements :

2

Emitter Base Voltage (VEBO) :

5V

Element Configuration :

Dual

RoHS Status :

ROHS3 Compliant

Transistor Type :

2 NPN - Pre-Biased (Dual)

hFE Min :

100

Lead Free :

Lead Free

Transistor Application :

SWITCHING

Collector Emitter Breakdown Voltage :

50V

Package / Case :

SC-74, SOT-457

Max Operating Temperature :

150°C

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

10

Max Collector Current :

100mA

JESD-30 Code :

R-PDSO-G6

Number of Terminations :

6

Mounting Type :

Surface Mount

Collector Emitter Voltage (VCEO) :

50V

VCEsat-Max :

0.3 V

Frequency - Transition :

250MHz

Base Part Number :

*MH8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)