IMH6AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Breakdown Voltage :

50V

Base Part Number :

*MH6

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Published :

2004

Transistor Type :

2 NPN - Pre-Biased (Dual)

Voltage - Rated DC :

50V

Max Output Current :

100mA

Max Power Dissipation :

300mW

Time@Peak Reflow Temperature-Max (s) :

10

JESD-609 Code :

e1

Packaging :

Tape and Reel (TR)

Max Operating Temperature :

150°C

Emitter Base Voltage (VEBO) :

5V

Frequency - Transition :

250MHz

Power Dissipation :

300mW

Number of Terminations :

6

Number of Pins :

74

HTS Code :

8541.21.00.75

Operating Supply Voltage :

50V

Polarity :

NPN

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V

Lead Free :

Lead Free

Pbfree Code :

yes

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Current Rating :

30mA

Transition Frequency :

250MHz

Width :

1.8mm

JESD-30 Code :

R-PDSO-G6

Length :

3mm

Package / Case :

SC-74, SOT-457

Additional Feature :

BUILT IN BIAS RESISTANCE RATIO IS 1.2

VCEsat-Max :

0.3 V

Max Breakdown Voltage :

50V

hFE Min :

68

Min Operating Temperature :

-55°C

Mounting Type :

Surface Mount

Terminal Finish :

TIN SILVER COPPER

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Application :

SWITCHING

Continuous Collector Current :

100mA

Radiation Hardening :

No

ECCN Code :

EAR99

Pin Count :

6

RoHS Status :

ROHS3 Compliant

Number of Elements :

2

Resistor - Base (R1) :

47k Ω

Resistor - Emitter Base (R2) :

47k Ω

Max Collector Current :

100mA

Factory Lead Time :

10 Weeks

Element Configuration :

Dual

Collector Emitter Voltage (VCEO) :

50V

Height :

1.2mm