IMH10AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Min Operating Temperature :

-55°C

Number of Terminations :

6

Polarity :

NPN

Factory Lead Time :

10 Weeks

Current - Collector Cutoff (Max) :

500nA

Current Rating :

100mA

Number of Pins :

6

Published :

2000

Voltage - Rated DC :

50V

Mount :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Continuous Collector Current :

100mA

Power Dissipation :

150mW

Mounting Type :

Surface Mount

Additional Feature :

BUILT IN BIAS RESISTOR RATIO 21

Transistor Application :

SWITCHING

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Package / Case :

SC-74, SOT-457

Radiation Hardening :

No

Pin Count :

6

Pbfree Code :

yes

Base Part Number :

*MH10

Terminal Form :

Gull wing

Transistor Type :

2 NPN - Pre-Biased (Dual)

Max Output Current :

100mA

Resistor - Base (R1) :

2.2k Ω

Collector Emitter Voltage (VCEO) :

300mV

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Resistor - Emitter Base (R2) :

47k Ω

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

80 @ 10mA 5V

Frequency - Transition :

250MHz

HTS Code :

8541.21.00.75

Time@Peak Reflow Temperature-Max (s) :

10

Max Power Dissipation :

300mW

Number of Elements :

2

Max Breakdown Voltage :

50V

Operating Supply Voltage :

50V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

VCEsat-Max :

0.3 V

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Max Operating Temperature :

150°C

Collector Emitter Breakdown Voltage :

50V

Transition Frequency :

250MHz

JESD-609 Code :

e1

hFE Min :

80

Max Collector Current :

100mA

RoHS Status :

ROHS3 Compliant