IMD3AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Transition Frequency :

250MHz

Radiation Hardening :

No

Power Dissipation :

300mW

RoHS Status :

ROHS3 Compliant

Max Collector Current :

100mA

Length :

3mm

VCEsat-Max :

0.3 V

JESD-609 Code :

e1

Max Output Current :

100mA

Number of Elements :

2

Max Power Dissipation :

300mW

Resistor - Base (R1) :

10k Ω

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Peak Reflow Temperature (Cel) :

260

ECCN Code :

EAR99

Polarity :

NPN, PNP

Element Configuration :

Dual

Package / Case :

SC-74, SOT-457

Number of Terminations :

6

Lead Free :

Lead Free

Base Part Number :

*MD3

Min Operating Temperature :

-55°C

Terminal Form :

Gull wing

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 1

Mount :

Surface Mount

Frequency - Transition :

250MHz

Factory Lead Time :

13 Weeks

Number of Pins :

6

Time@Peak Reflow Temperature-Max (s) :

10

Collector Emitter Voltage (VCEO) :

300mV

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

REACH SVHC :

No SVHC

Max Breakdown Voltage :

50V

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Resistor - Emitter Base (R2) :

10k Ω

Emitter Base Voltage (VEBO) :

5V

HTS Code :

8541.21.00.75

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

hFE Min :

30

Current - Collector Cutoff (Max) :

500nA

Published :

2005

Height :

1.2mm

Width :

1.8mm

Pin Count :

6

Max Operating Temperature :

150°C

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

30 @ 5mA 5V

Collector Emitter Breakdown Voltage :

50V

Continuous Collector Current :

50mA

Operating Supply Voltage :

50V