IMD2AT108

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Emitter Base Voltage (VEBO) :

5V

Max Operating Temperature :

150°C

Resistor - Emitter Base (R2) :

22k Ω

Max Output Current :

100mA

Factory Lead Time :

13 Weeks

Transistor Application :

SWITCHING

Current - Collector Cutoff (Max) :

500nA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

Current Rating :

30mA

Height :

1.2mm

Published :

2005

HTS Code :

8541.21.00.75

Packaging :

Tape and Reel (TR)

Power Dissipation :

300mW

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

300mV

Radiation Hardening :

No

Operating Supply Voltage :

50V

VCEsat-Max :

0.3 V

Number of Elements :

2

Mounting Type :

Surface Mount

Peak Reflow Temperature (Cel) :

260

Pin Count :

6

Vce Saturation (Max) @ Ib, Ic :

300mV @ 500μA, 10mA

Terminal Finish :

TIN SILVER COPPER

Time@Peak Reflow Temperature-Max (s) :

10

Transistor Type :

1 NPN, 1 PNP - Pre-Biased (Dual)

Width :

1.8mm

Number of Terminations :

6

Package / Case :

SC-74, SOT-457

ECCN Code :

EAR99

Max Breakdown Voltage :

50V

Terminal Form :

Gull wing

Pbfree Code :

yes

Max Collector Current :

100mA

Length :

3mm

Element Configuration :

Dual

Additional Feature :

BUILT-IN BIAS RESISTOR RATIO IS 1

Voltage - Rated DC :

50V

Transition Frequency :

250MHz

Resistor - Base (R1) :

22k Ω

Mount :

Surface Mount

Continuous Collector Current :

30mA

Base Part Number :

*MD2

Min Operating Temperature :

-55°C

DC Current Gain (hFE) (Min) @ Ic, Vce :

56 @ 5mA 5V

Frequency - Transition :

250MHz

hFE Min :

56

Polarity :

NPN, PNP

Collector Emitter Breakdown Voltage :

50V

Max Power Dissipation :

300mW

Number of Pins :

6

RoHS Status :

ROHS3 Compliant