IMB9AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Collector Emitter Voltage (VCEO) :

300mV

Package / Case :

SC-74, SOT-457

Vce Saturation (Max) @ Ib, Ic :

300mV @ 250µA, 5mA

Base Part Number :

MB9

hFE Min :

68

JESD-609 Code :

e1

Number of Terminations :

6

Number of Elements :

2

Resistor - Emitter Base (R2) :

47k Ω

Max Power Dissipation :

300mW

Lead Free :

Lead Free

Min Operating Temperature :

-55°C

Number of Pins :

6

Current - Collector Cutoff (Max) :

500nA

Peak Reflow Temperature (Cel) :

260

Max Breakdown Voltage :

50V

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Power Dissipation :

300mW

Frequency - Transition :

250MHz

Voltage - Rated DC :

-50V

Current Rating :

-70mA

Resistor - Base (R1) :

10k Ω

Published :

2004

Max Collector Current :

100mA

Time@Peak Reflow Temperature-Max (s) :

10

Max Output Current :

100mA

Max Operating Temperature :

150°C

HTS Code :

8541.21.00.75

Additional Feature :

DIGITAL, BUILT-IN BIAS RESISTOR RATIO IS 4.7

Mount :

Surface Mount

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

Continuous Collector Current :

-70mA

Transistor Type :

2 PNP - Pre-Biased (Dual)

ECCN Code :

EAR99

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Breakdown Voltage :

50V

VCEsat-Max :

0.3 V

Radiation Hardening :

No

Transition Frequency :

250MHz

Transistor Application :

SWITCHING

Pbfree Code :

yes

Factory Lead Time :

7 Weeks

Polarity :

PNP

Pin Count :

6

Operating Supply Voltage :

50V

Element Configuration :

Dual

DC Current Gain (hFE) (Min) @ Ic, Vce :

68 @ 5mA 5V