IMB3AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Max Operating Temperature :

150°C

Emitter Base Voltage (VEBO) :

-5V

Transition Frequency :

250MHz

Additional Feature :

BUILT-IN BIAS RESISTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Collector Current :

100mA

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 5mA

Terminal Form :

Gull wing

Element Configuration :

Dual

Number of Elements :

2

Time@Peak Reflow Temperature-Max (s) :

10

RoHS Status :

ROHS3 Compliant

Resistor - Base (R1) :

4.7k Ω

Pin Count :

6

Frequency - Transition :

250MHz

Continuous Collector Current :

-100mA

Collector Emitter Breakdown Voltage :

50V

Max Output Current :

100mA

Min Operating Temperature :

-55°C

Factory Lead Time :

13 Weeks

Published :

2005

Number of Pins :

6

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

VCEsat-Max :

0.3 V

Base Part Number :

MB3

Package / Case :

SC-74, SOT-457

Radiation Hardening :

No

Current Rating :

-100mA

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

300mV

Terminal Finish :

TIN SILVER COPPER

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Operating Supply Voltage :

50V

HTS Code :

8541.21.00.75

Max Power Dissipation :

300mW

JESD-609 Code :

e1

Mounting Type :

Surface Mount

Power Dissipation :

300mW

Packaging :

Tape and Reel (TR)

hFE Min :

100

Transistor Type :

2 PNP - Pre-Biased (Dual)

Mount :

Surface Mount

Number of Terminations :

6

Pbfree Code :

yes

ECCN Code :

EAR99

Polarity :

PNP

Voltage - Rated DC :

-50V

Peak Reflow Temperature (Cel) :

260