IMB3AT110

Manufacturer :

ROHM Semiconductor

Product Category :

Transistors - Bipolar (BJT) - Arrays, Pre-Biased

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Emitter Base Voltage (VEBO) :

-5V

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 1mA 5V

Pbfree Code :

yes

Additional Feature :

BUILT-IN BIAS RESISTOR

Power Dissipation :

300mW

Terminal Form :

Gull wing

Transistor Type :

2 PNP - Pre-Biased (Dual)

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-50V

Number of Elements :

2

Max Operating Temperature :

150°C

Max Power Dissipation :

300mW

Frequency - Transition :

250MHz

VCEsat-Max :

0.3 V

Mounting Type :

Surface Mount

Base Part Number :

MB3

hFE Min :

100

Mount :

Surface Mount

Continuous Collector Current :

-100mA

JESD-609 Code :

e1

Element Configuration :

Dual

Transition Frequency :

250MHz

Published :

2005

Number of Pins :

6

Factory Lead Time :

13 Weeks

Time@Peak Reflow Temperature-Max (s) :

10

Max Output Current :

100mA

Terminal Finish :

TIN SILVER COPPER

Packaging :

Tape and Reel (TR)

HTS Code :

8541.21.00.75

Pin Count :

6

Transistor Application :

SWITCHING

Collector Emitter Voltage (VCEO) :

300mV

Min Operating Temperature :

-55°C

Resistor - Base (R1) :

4.7k Ω

Current Rating :

-100mA

Collector Emitter Breakdown Voltage :

50V

Number of Terminations :

6

Polarity :

PNP

Operating Supply Voltage :

50V

ECCN Code :

EAR99

Vce Saturation (Max) @ Ib, Ic :

300mV @ 2.5mA, 5mA

Lead Free :

Lead Free

Package / Case :

SC-74, SOT-457

Max Collector Current :

100mA

REACH SVHC :

No SVHC