IKY50N120CH3XKSA1
- Mfr.Part #
- IKY50N120CH3XKSA1
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-4
- Datasheet
- Download
- Description
- IGBT 1200V 100A TO247-4
- Stock
- 425
- In Stock :
- 425
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Surface Mount :
- No
- Transistor Application :
- POWER CONTROL
- Td (on/off) @ 25°C :
- 32ns/296ns
- Polarity/Channel Type :
- N-Channel
- Input Type :
- Standard
- ECCN Code :
- EAR99
- Power - Max :
- 652W
- Reverse Recovery Time :
- 255ns
- Moisture Sensitivity Level (MSL) :
- Not Applicable
- Turn On Time :
- 62 ns
- Current - Collector (Ic) (Max) :
- 100A
- Turn Off Time-Nom (toff) :
- 462 ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Gate Charge :
- 235nC
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 14 Weeks
- Published :
- 2014
- Vce(on) (Max) @ Vge, Ic :
- 2.35V @ 15V, 50A
- Switching Energy :
- 2.3mJ (on), 1.9mJ (off)
- JESD-30 Code :
- R-PSFM-T4
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Terminal Position :
- Single
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Package / Case :
- TO-247-4
- Packaging :
- Tube
- Current - Collector Pulsed (Icm) :
- 200A
- Test Condition :
- 600V, 50A, 10 Ω, 15V
- Voltage - Collector Emitter Breakdown (Max) :
- 1200V
- Operating Temperature :
- -40°C~175°C TJ
- Datasheets
- IKY50N120CH3XKSA1

IKY50N120CH3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IKY50N120CH3XKSA1 Description
IKY50N120CH3XKSA1 is a 1200v low switching loss IGBT in Highspeed3 technology co-packed with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. The Infineon IKY50N120CH3XKSA1 can be applied in industrial UPS, charger, energy storage, and three-level solar string inverter applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKY50N120CH3XKSA1 is in the PG-TO247-4-2 package with 652W power dissipation.
IKY50N120CH3XKSA1 Features
Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High-speed H3 technology
High efficiency in hard switching and resonant topologies
10μsec short circuit withstands time at Tv=175°C.
Easy paralleling capability due to positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge Qc
Very soft, fast recovery full current anti-parallel diode
Maximum junction temperature 175°C.
Pb-free lead plating; RoHS compliant
IKY50N120CH3XKSA1 Applications
Industrial UPS
Charger
Energy Storage
Three-level Solar String Inverter
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