IKY50N120CH3XKSA1

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Mfr.Part #
IKY50N120CH3XKSA1
Manufacturer
Infineon Technologies
Package / Case
TO-247-4
Datasheet
Download
Description
IGBT 1200V 100A TO247-4
Stock
425
In Stock :
425

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Surface Mount :
No
Transistor Application :
POWER CONTROL
Td (on/off) @ 25°C :
32ns/296ns
Polarity/Channel Type :
N-Channel
Input Type :
Standard
ECCN Code :
EAR99
Power - Max :
652W
Reverse Recovery Time :
255ns
Moisture Sensitivity Level (MSL) :
Not Applicable
Turn On Time :
62 ns
Current - Collector (Ic) (Max) :
100A
Turn Off Time-Nom (toff) :
462 ns
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Gate Charge :
235nC
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Transistor Element Material :
SILICON
Mounting Type :
Through Hole
Factory Lead Time :
14 Weeks
Published :
2014
Vce(on) (Max) @ Vge, Ic :
2.35V @ 15V, 50A
Switching Energy :
2.3mJ (on), 1.9mJ (off)
JESD-30 Code :
R-PSFM-T4
Configuration :
SINGLE WITH BUILT-IN DIODE
Terminal Position :
Single
RoHS Status :
ROHS3 Compliant
Number of Terminations :
4
Number of Elements :
1
Package / Case :
TO-247-4
Packaging :
Tube
Current - Collector Pulsed (Icm) :
200A
Test Condition :
600V, 50A, 10 Ω, 15V
Voltage - Collector Emitter Breakdown (Max) :
1200V
Operating Temperature :
-40°C~175°C TJ
Datasheets
IKY50N120CH3XKSA1
Introducing Transistors - IGBTs - Single Infineon Technologies IKY50N120CH3XKSA1 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:4, Package / Case:TO-247-4, Operating Temperature:-40°C~175°C TJ, IKY50N120CH3XKSA1 pinout, IKY50N120CH3XKSA1 datasheet PDF, IKY50N120CH3XKSA1 amp .Beyond Transistors - IGBTs - Single Infineon Technologies IKY50N120CH3XKSA1 ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IKY50N120CH3XKSA1


IKY50N120CH3XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IKY50N120CH3XKSA1 Description


IKY50N120CH3XKSA1 is a 1200v low switching loss IGBT in Highspeed3 technology co-packed with a soft, fast recovery full current rated anti-parallel Emitter Controlled diode. The Infineon IKY50N120CH3XKSA1 can be applied in industrial UPS, charger, energy storage, and three-level solar string inverter applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IKY50N120CH3XKSA1 is in the PG-TO247-4-2 package with 652W power dissipation.



IKY50N120CH3XKSA1 Features


Ultra-low loss switching losses thanks to Kelvin emitter pin package in combination with High-speed H3 technology

High efficiency in hard switching and resonant topologies

10μsec short circuit withstands time at Tv=175°C.

Easy paralleling capability due to positive temperature coefficient in VCE(sat)

Low EMI

Low Gate Charge Qc

Very soft, fast recovery full current anti-parallel diode

Maximum junction temperature 175°C.

Pb-free lead plating; RoHS compliant



IKY50N120CH3XKSA1 Applications


Industrial UPS

Charger

Energy Storage

Three-level Solar String Inverter


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