IHW30N135R3
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- Mfr.Part #
- IHW30N135R3
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- REVERSE CONDUCTING IGBT
- Stock
- 14,310
- In Stock ：
- 14,310
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Test Condition :
- 600V, 30A, 10 Ω, 15V
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Breakdown Voltage :
- 1.35kV
- Gate-Emitter Voltage-Max :
- 20V
- Voltage - Collector Emitter Breakdown (Max) :
- 1350V
- Collector Emitter Saturation Voltage :
- 1.85V
- Collector Emitter Voltage (VCEO) :
- 1.35kV
- Input Type :
- Standard
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Max Collector Current :
- 60A
- Lead Free :
- Lead Free
- Packaging :
- Tube
- Switching Energy :
- 1.93mJ (off)
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Power - Max :
- 349W
- Gate-Emitter Thr Voltage-Max :
- 6.4V
- Package / Case :
- TO-247-3
- Factory Lead Time :
- 14 Weeks
- Series :
- TrenchStop®
- Polarity/Channel Type :
- N-Channel
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C~175°C TJ
- IGBT Type :
- Trench
- Number of Pins :
- 3
- Td (on/off) @ 25°C :
- -/337ns
- Max Power Dissipation :
- 349W
- Mount :
- Through Hole
- Element Configuration :
- Single
- Gate Charge :
- 263nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 1.85V @ 15V, 30A
- Current - Collector Pulsed (Icm) :
- 90A
- ECCN Code :
- EAR99
- Power Dissipation :
- 175W
- JESD-609 Code :
- e3
- Published :
- 2006
- Datasheets
- IHW30N135R3
IHW30N135R3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IHW30N135R3FKSA1 Description
IHW30N135R3FKSA1, provided by Infineon Technologies, is a type of reverse-conducting IGBT with a monolithic body diode. Based on TRENCHSTOPTM technology, it is able to deliver high ruggedness, stable temperature behavior, very low VCEsat, and low Eoff, as well as easy parallel switching capability due to the positive temperature coefficient in VCEsat. Therefore, IHW30N135R3FKSA1 IGBT is well suited for a wide range of applications, including inverterized microwave ovens, resonant converters, and more.
IHW30N135R3FKSA1 Features
High ruggedness
Temperature stable behavior
Very low VCEsat and low Eoff
Easy parallel switching capability
Positive temperature coefficient in VCEsat
IHW30N135R3FKSA1 Applications
Inductive cooking
Inverterized microwave ovens
Resonant converters
Soft switching applications
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