IGW50N60T

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Mfr.Part #
IGW50N60T
Manufacturer
Infineon Technologies
Package / Case
TO-247-3
Datasheet
Download
Description
IGW50N60 - DISCRETE IGBT WITHOUT
Stock
15,971
In Stock :
15,971

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - IGBTs - Single
Transistor Application :
POWER CONTROL
Polarity/Channel Type :
N-Channel
JEDEC-95 Code :
TO-247AC
Current - Collector Pulsed (Icm) :
150A
Terminal Finish :
Tin (Sn)
Factory Lead Time :
16 Weeks
Published :
2008
Terminal Position :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Input Type :
Standard
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Switching Energy :
2.6mJ
Number of Terminations :
3
Package / Case :
TO-247-3
Configuration :
Single
Power - Max :
333W
RoHS Status :
ROHS3 Compliant
Td (on/off) @ 25°C :
26ns/299ns
Series :
TrenchStop®
JESD-609 Code :
e3
Test Condition :
400V, 50A, 7 Ω, 15V
Pbfree Code :
yes
Gate Charge :
310nC
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Surface Mount :
No
Voltage - Collector Emitter Breakdown (Max) :
600V
JESD-30 Code :
R-PSFM-T3
Pin Count :
3
Additional Feature :
FAST SWITCHING
Vce(on) (Max) @ Vge, Ic :
2V @ 15V, 50A
Current - Collector (Ic) (Max) :
100A
Packaging :
Tube
Transistor Element Material :
SILICON
Operating Temperature :
-40°C~175°C TJ
ECCN Code :
EAR99
Number of Elements :
1
Case Connection :
COLLECTOR
IGBT Type :
Trench Field Stop
Turn Off Time-Nom (toff) :
396 ns
Turn On Time :
60 ns
Datasheets
IGW50N60T
Introducing Transistors - IGBTs - Single Infineon Technologies IGW50N60T from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-247-3, Operating Temperature:-40°C~175°C TJ, IGW50N60T pinout, IGW50N60T datasheet PDF, IGW50N60T amp .Beyond Transistors - IGBTs - Single Infineon Technologies IGW50N60T ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IGW50N60T


IGW50N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IGW50N60TFKSA1 Description

 

IGW50N60TFKSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW50N60TFKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

IGW50N60TFKSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IGW50N60TFKSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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