IGW50N60T
- Mfr.Part #
- IGW50N60T
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- IGW50N60 - DISCRETE IGBT WITHOUT
- Stock
- 15,971
- In Stock :
- 15,971
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Transistor Application :
- POWER CONTROL
- Polarity/Channel Type :
- N-Channel
- JEDEC-95 Code :
- TO-247AC
- Current - Collector Pulsed (Icm) :
- 150A
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 16 Weeks
- Published :
- 2008
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Type :
- Standard
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- Switching Energy :
- 2.6mJ
- Number of Terminations :
- 3
- Package / Case :
- TO-247-3
- Configuration :
- Single
- Power - Max :
- 333W
- RoHS Status :
- ROHS3 Compliant
- Td (on/off) @ 25°C :
- 26ns/299ns
- Series :
- TrenchStop®
- JESD-609 Code :
- e3
- Test Condition :
- 400V, 50A, 7 Ω, 15V
- Pbfree Code :
- yes
- Gate Charge :
- 310nC
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Surface Mount :
- No
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- JESD-30 Code :
- R-PSFM-T3
- Pin Count :
- 3
- Additional Feature :
- FAST SWITCHING
- Vce(on) (Max) @ Vge, Ic :
- 2V @ 15V, 50A
- Current - Collector (Ic) (Max) :
- 100A
- Packaging :
- Tube
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -40°C~175°C TJ
- ECCN Code :
- EAR99
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- IGBT Type :
- Trench Field Stop
- Turn Off Time-Nom (toff) :
- 396 ns
- Turn On Time :
- 60 ns
- Datasheets
- IGW50N60T

IGW50N60TFKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IGW50N60TFKSA1 Description
IGW50N60TFKSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW50N60TFKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IGW50N60TFKSA1 Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IGW50N60TFKSA1 Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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