IGB30N60T
- Mfr.Part #
- IGB30N60T
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGB30N60 - DISCRETE IGBT WITHOUT
- Stock
- 3,594
- In Stock :
- 3,594
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - IGBTs - Single
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Current - Collector Pulsed (Icm) :
- 90A
- RoHS Status :
- ROHS3 Compliant
- IGBT Type :
- Trench
- Gate Charge :
- 167nC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce(on) (Max) @ Vge, Ic :
- 2.05V @ 15V, 30A
- Test Condition :
- 400V, 30A, 10.6Ohm, 15V
- Published :
- 2006
- Input Type :
- Standard
- Switching Energy :
- 1.46mJ
- Td (on/off) @ 25°C :
- 23ns/254ns
- Base Part Number :
- GB30N60
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package :
- PG-TO263-3-2
- Series :
- TrenchStop®
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 26 Weeks
- Operating Temperature :
- -40°C~175°C TJ
- Mounting Type :
- Surface Mount
- Current - Collector (Ic) (Max) :
- 60A
- Power - Max :
- 187W
- Datasheets
- IGB30N60T

IGB30N60TATMA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IGB30N60TATMA1 Description
TRENCHSTOPTM and Fieldstop technology with IGBT
IGB30N60TATMA1 Features
-
The temperature coefficient in VCE is positive (sat)
-
Lower EMI
-
Pb-free lead plating; compatible with RoHS
-
JEDEC1-qualified for the intended applications
IGB30N60TATMA1 Applications
Switching applications
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