HUF75637S3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Position :

Single

Power Dissipation-Max :

155W Tc

Vgs (Max) :

±20V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

RoHS Status :

ROHS3 Compliant

Drain-source On Resistance-Max :

0.03Ohm

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~175°C TJ

Reach Compliance Code :

Unknown

FET Type :

N-Channel

Qualification Status :

COMMERCIAL

Terminal Finish :

MATTE TIN

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

1.7pF @ 25V

Mounting Type :

Surface Mount

Configuration :

SINGLE WITH BUILT-IN DIODE

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

2

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

100V

Current - Continuous Drain (Id) @ 25°C :

44A Tc

Rds On (Max) @ Id, Vgs :

30m Ω @ 44A, 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

100V

Series :

UltraFET™

Drain Current-Max (Abs) (ID) :

44A

Number of Elements :

1

Surface Mount :

yes

Terminal Form :

Gull wing

Gate Charge (Qg) (Max) @ Vgs :

108nC @ 20V