HUF75229P3
- Mfr.Part #
- HUF75229P3
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 44A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.06pF @ 25V
- Power Dissipation-Max :
- 90W Tc
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 44A, 10V
- Qualification Status :
- COMMERCIAL
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Operating Mode :
- ENHANCEMENT MODE
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- JEDEC-95 Code :
- TO-220AB
- Transistor Application :
- SWITCHING
- Surface Mount :
- No
- Terminal Finish :
- MATTE TIN
- Terminal Position :
- Single
- Vgs (Max) :
- ±20V
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- JESD-30 Code :
- R-PSFM-T3
- DS Breakdown Voltage-Min :
- 50V
- Number of Terminations :
- 3
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Drain to Source Voltage (Vdss) :
- 50V
- Operating Temperature :
- -55°C~175°C TJ
- Package / Case :
- TO-220-3
- Pbfree Code :
- yes
- Drain-source On Resistance-Max :
- 0.022Ohm
- Series :
- UltraFET™
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Reach Compliance Code :
- Unknown
- FET Type :
- N-Channel
- Transistor Element Material :
- SILICON
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Drain Current-Max (Abs) (ID) :
- 44A
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 20V
- JESD-609 Code :
- e3
- Datasheets
- HUF75229P3

N-Channel Tube 22m Ω @ 44A, 10V ±20V 1.06pF @ 25V 75nC @ 20V 50V TO-220-3
HUF75229P3 Overview
A device's maximal input capacitance is 1.06pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 44A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 50V.This transistor requires a 50V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
HUF75229P3 Features
a 50V drain to source voltage (Vdss)
HUF75229P3 Applications
There are a lot of Rochester Electronics, LLC
HUF75229P3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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