HUF75229P3
- Mfr.Part #
- HUF75229P3
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 50V 44A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 44A Tc
- Transistor Application :
- SWITCHING
- JESD-609 Code :
- e3
- Drain Current-Max (Abs) (ID) :
- 44A
- Case Connection :
- DRAIN
- Operating Temperature :
- -55°C~175°C TJ
- DS Breakdown Voltage-Min :
- 50V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 44A, 10V
- Reach Compliance Code :
- Unknown
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.06pF @ 25V
- Power Dissipation-Max :
- 90W Tc
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- Not Applicable
- Number of Elements :
- 1
- Drain-source On Resistance-Max :
- 0.022Ohm
- Terminal Finish :
- MATTE TIN
- Drain to Source Voltage (Vdss) :
- 50V
- Time@Peak Reflow Temperature-Max (s) :
- Not Applicable
- Surface Mount :
- No
- Qualification Status :
- COMMERCIAL
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Gate Charge (Qg) (Max) @ Vgs :
- 75nC @ 20V
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PSFM-T3
- RoHS Status :
- ROHS3 Compliant
- Mounting Type :
- Through Hole
- Series :
- UltraFET™
- Terminal Position :
- Single
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- HUF75229P3

N-Channel Tube 22m Ω @ 44A, 10V ±20V 1.06pF @ 25V 75nC @ 20V 50V TO-220-3
HUF75229P3 Overview
A device's maximal input capacitance is 1.06pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 44A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 50V.This transistor requires a 50V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
HUF75229P3 Features
a 50V drain to source voltage (Vdss)
HUF75229P3 Applications
There are a lot of Rochester Electronics, LLC
HUF75229P3 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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