HUF75307T3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PDSO-G4

Drain to Source Voltage (Vdss) :

55V

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

2.6A Ta

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 20V

Transistor Element Material :

SILICON

Power Dissipation-Max :

1.1W Ta

DS Breakdown Voltage-Min :

55V

Number of Terminations :

4

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Form :

Gull wing

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

2.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.009Ohm

Time@Peak Reflow Temperature-Max (s) :

30

Vgs (Max) :

±20V

Terminal Finish :

MATTE TIN

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-261-4, TO-261AA

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Pbfree Code :

yes

Rds On (Max) @ Id, Vgs :

90m Ω @ 2.6A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 25V

Packaging :

Tape and Reel (TR)

Qualification Status :

COMMERCIAL

FET Type :

N-Channel

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual