HN3C10FUTE85LF
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- Mfr.Part #
- HN3C10FUTE85LF
- Manufacturer
- Toshiba Electronic Devices and Storage Corporation
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- Datasheet
- Download
- Description
- RF TRANS 2 NPN 12V 7GHZ US6
- Stock
- 26,120
- In Stock ：
- 26,120
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- Manufacturer :
- Toshiba Electronic Devices and Storage Corporation
- Product Category :
- Transistors - Bipolar (BJT) - RF
- Gain :
- 11.5dB
- Power - Max :
- 200mW
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 12V
- Frequency - Transition :
- 7GHz
- Packaging :
- Cut Tape (CT)
- Collector Emitter Breakdown Voltage :
- 12V
- Max Collector Current :
- 80mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 80 @ 20mA 10V
- Noise Figure (dB Typ @ f) :
- 1.1dB @ 1GHz
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Max Power Dissipation :
- 200mW
- Package / Case :
- 6-TSSOP, SC-88, SOT-363
- Transistor Type :
- 2 NPN (Dual)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- HN3C10FUTE85LF
HN3C10FUTE85LF datasheet pdf and Transistors - Bipolar (BJT) - RF product details from Toshiba Semiconductor and Storage stock available at
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|---|---|---|---|
| HN3C51F-BL(TE85L,F | Toshiba Electronic Devices and Storage Corporation | 3,726 | TRANS 2NPN 120V 0.1A SM6 |
| HN3C51F-GR(TE85L,F | Toshiba Electronic Devices and Storage Corporation | 15,232 | TRANS 2NPN 120V 0.1A SM6 |
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