HGTP3N60A4D

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Packaging :

Tube

Pbfree Code :

yes

Weight :

1.8g

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

Voltage - Rated DC :

600V

Current Rating :

17A

Transistor Element Material :

SILICON

Element Configuration :

Single

Radiation Hardening :

No

Max Power Dissipation :

70W

Mount :

Through Hole

Input Type :

Standard

Polarity/Channel Type :

N-Channel

Max Collector Current :

17A

Switching Energy :

37μJ (on), 25μJ (off)

Number of Pins :

3

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Transistor Application :

POWER CONTROL

Rise Time :

11ns

Number of Elements :

1

Mounting Type :

Through Hole

Number of Terminations :

3

Turn Off Time-Nom (toff) :

180 ns

Current - Collector Pulsed (Icm) :

40A

Factory Lead Time :

36 Weeks

Test Condition :

390V, 3A, 50 Ω, 15V

HTS Code :

8541.29.00.95

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 3A

Collector Emitter Saturation Voltage :

2V

JEDEC-95 Code :

TO-220AB

Turn On Time :

17.5 ns

Terminal Finish :

MATTE TIN

Additional Feature :

LOW CONDUCTION LOSS

Reverse Recovery Time :

19 ns

JESD-609 Code :

e3

Td (on/off) @ 25°C :

6ns/73ns

Collector Emitter Breakdown Voltage :

600V

Package / Case :

TO-220-3

Collector Emitter Voltage (VCEO) :

600V

Gate Charge :

21nC

Case Connection :

COLLECTOR

Power Dissipation :

70W