FZT968TA
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- Mfr.Part #
- FZT968TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 12V 6A SOT223-3
- Stock
- 127,033
- In Stock ：
- 127,033
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Frequency :
- 80MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -360mV
- Transistor Application :
- SWITCHING
- Pbfree Code :
- No
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 80MHz
- Published :
- 2006
- Number of Pins :
- 4
- Height :
- 1.65mm
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- -12V
- JESD-609 Code :
- e3
- Base Part Number :
- FZT968
- Max Breakdown Voltage :
- 12V
- Max Collector Current :
- 6A
- Terminal Form :
- Gull wing
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 500mA 1V
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 15 Weeks
- Collector Emitter Voltage (VCEO) :
- 12V
- Polarity/Channel Type :
- PNP
- Continuous Collector Current :
- -6A
- Max Power Dissipation :
- 3W
- Transistor Type :
- PNP
- Gain Bandwidth Product :
- 80MHz
- Current - Collector Cutoff (Max) :
- 10nA ICBO
- Collector Emitter Breakdown Voltage :
- 12V
- Terminal Finish :
- Matte Tin (Sn)
- Weight :
- 7.994566mg
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-261-4, TO-261AA
- Collector Base Voltage (VCBO) :
- 15V
- Current Rating :
- -6A
- Mounting Type :
- Surface Mount
- Power Dissipation :
- 3W
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- -6V
- Width :
- 3.7mm
- Packaging :
- Cut Tape (CT)
- Number of Terminations :
- 4
- Length :
- 6.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 450mV @ 250mA, 6A
- Datasheets
- FZT968TA
PNP -55°C~150°C TJ 10nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT968TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 300 @ 500mA 1V.The collector emitter saturation voltage is -360mV, which allows for maximum design flexibility.When VCE saturation is 450mV @ 250mA, 6A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -6A for high efficiency.Emitter base voltages of -6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -6A.In the part, the transition frequency is 80MHz.This device can take an input voltage of 12V volts before it breaks down.A maximum collector current of 6A volts can be achieved.
FZT968TA Features
the DC current gain for this device is 300 @ 500mA 1V
a collector emitter saturation voltage of -360mV
the vce saturation(Max) is 450mV @ 250mA, 6A
the emitter base voltage is kept at -6V
the current rating of this device is -6A
a transition frequency of 80MHz
FZT968TA Applications
There are a lot of Diodes Incorporated
FZT968TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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