FZT951TA
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- Mfr.Part #
- FZT951TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A SOT223-3
- Stock
- 327
- In Stock ：
- 327
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 4
- Packaging :
- Cut Tape (CT)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 3W
- Radiation Hardening :
- No
- Frequency :
- 120MHz
- Operating Temperature :
- -55°C~150°C TJ
- Voltage - Rated DC :
- -60V
- Transistor Type :
- PNP
- Package / Case :
- TO-261-4, TO-261AA
- Mount :
- Surface Mount
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 460mV
- Factory Lead Time :
- 15 Weeks
- Length :
- 6.7mm
- Contact Plating :
- Tin
- Base Part Number :
- FZT951
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 60V
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 3W
- Width :
- 3.7mm
- Vce Saturation (Max) @ Ib, Ic :
- 460mV @ 500mA, 5A
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Base Voltage (VCBO) :
- 100V
- Lead Free :
- Lead Free
- Max Collector Current :
- 5A
- Height :
- 1.65mm
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 6V
- JESD-609 Code :
- e3
- Number of Elements :
- 1
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- hFE Min :
- 100
- Number of Pins :
- 3
- Transition Frequency :
- 120MHz
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Termination :
- SMD/SMT
- Polarity/Channel Type :
- PNP
- Current Rating :
- -5A
- JESD-30 Code :
- R-PDSO-G4
- Mounting Type :
- Surface Mount
- Gain Bandwidth Product :
- 120MHz
- Datasheets
- FZT951TA
FZT951TA Documents
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT951TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 460mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 460mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).120MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
FZT951TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 460mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz
FZT951TA Applications
There are a lot of Diodes Incorporated
FZT951TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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