FZT951TA
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- Mfr.Part #
- FZT951TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 60V 5A SOT223-3
- Stock
- 327
- In Stock ：
- 327
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mount :
- Surface Mount
- Operating Temperature :
- -55°C~150°C TJ
- Polarity/Channel Type :
- PNP
- hFE Min :
- 100
- Radiation Hardening :
- No
- Voltage - Rated DC :
- -60V
- Weight :
- 7.994566mg
- Terminal Position :
- Dual
- Vce Saturation (Max) @ Ib, Ic :
- 460mV @ 500mA, 5A
- JESD-30 Code :
- R-PDSO-G4
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Saturation Voltage :
- 460mV
- REACH SVHC :
- No SVHC
- Base Part Number :
- FZT951
- RoHS Status :
- ROHS3 Compliant
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Gain Bandwidth Product :
- 120MHz
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 5A
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- PNP
- Number of Pins :
- 3
- Max Breakdown Voltage :
- 60V
- Terminal Form :
- Gull wing
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Width :
- 3.7mm
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 120MHz
- Power Dissipation :
- 3W
- Termination :
- SMD/SMT
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Packaging :
- Cut Tape (CT)
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Number of Terminations :
- 4
- Lead Free :
- Lead Free
- Frequency :
- 120MHz
- Collector Base Voltage (VCBO) :
- 100V
- Length :
- 6.7mm
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Current Rating :
- -5A
- JESD-609 Code :
- e3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 3W
- Height :
- 1.65mm
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 60V
- Datasheets
- FZT951TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT951TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 460mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 460mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).120MHz is present in the transition frequency.An input voltage of 60V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
FZT951TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of 460mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 120MHz
FZT951TA Applications
There are a lot of Diodes Incorporated
FZT951TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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