FZT953TA
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- Mfr.Part #
- FZT953TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 195
- In Stock ：
- 195
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Position :
- Dual
- Terminal Form :
- Gull wing
- Weight :
- 7.994566mg
- Max Power Dissipation :
- 3W
- Mounting Type :
- Surface Mount
- Pbfree Code :
- No
- Mount :
- Surface Mount
- Element Configuration :
- Single
- Current Rating :
- -5A
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 460mV @ 500mA, 5A
- Max Collector Current :
- 5A
- Transition Frequency :
- 125MHz
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 100V
- Package / Case :
- TO-261-4, TO-261AA
- Factory Lead Time :
- 15 Weeks
- Length :
- 6.7mm
- hFE Min :
- 100
- Polarity/Channel Type :
- PNP
- JESD-30 Code :
- R-PDSO-G4
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Collector Emitter Saturation Voltage :
- -420mV
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 140V
- REACH SVHC :
- No SVHC
- Max Breakdown Voltage :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- COLLECTOR
- Packaging :
- Cut Tape (CT)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Frequency - Transition :
- 120MHz
- Voltage - Rated DC :
- -100V
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- PNP
- Height :
- 1.65mm
- Base Part Number :
- FZT953
- Termination :
- SMD/SMT
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Peak Reflow Temperature (Cel) :
- 260
- Frequency :
- 125MHz
- Radiation Hardening :
- No
- Width :
- 3.7mm
- Power Dissipation :
- 3W
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 125MHz
- Number of Terminations :
- 4
- Datasheets
- FZT953TA
FZT953TA Documents
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT953TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -420mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 460mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).125MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
FZT953TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 125MHz
FZT953TA Applications
There are a lot of Diodes Incorporated
FZT953TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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