FZT953TA
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- Mfr.Part #
- FZT953TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 195
- In Stock ：
- 195
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 100V
- Weight :
- 7.994566mg
- Transition Frequency :
- 125MHz
- Packaging :
- Cut Tape (CT)
- Peak Reflow Temperature (Cel) :
- 260
- Max Collector Current :
- 5A
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- Published :
- 2006
- Termination :
- SMD/SMT
- Length :
- 6.7mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Current Rating :
- -5A
- Radiation Hardening :
- No
- Terminal Position :
- Dual
- Mounting Type :
- Surface Mount
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 125MHz
- Element Configuration :
- Single
- RoHS Status :
- ROHS3 Compliant
- Height :
- 1.65mm
- hFE Min :
- 100
- Base Part Number :
- FZT953
- Voltage - Rated DC :
- -100V
- Mount :
- Surface Mount
- Width :
- 3.7mm
- Lead Free :
- Lead Free
- JESD-30 Code :
- R-PDSO-G4
- Frequency :
- 125MHz
- Max Power Dissipation :
- 3W
- Collector Emitter Saturation Voltage :
- -420mV
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Pbfree Code :
- No
- Frequency - Transition :
- 120MHz
- Package / Case :
- TO-261-4, TO-261AA
- Transistor Type :
- PNP
- Power Dissipation :
- 3W
- Vce Saturation (Max) @ Ib, Ic :
- 460mV @ 500mA, 5A
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 140V
- Number of Pins :
- 3
- Factory Lead Time :
- 15 Weeks
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Max Breakdown Voltage :
- 100V
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 100V
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Datasheets
- FZT953TA
FZT953TA Documents
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT953TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -420mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 460mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).125MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
FZT953TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 125MHz
FZT953TA Applications
There are a lot of Diodes Incorporated
FZT953TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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