FZT953TA
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- Mfr.Part #
- FZT953TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 5A SOT223-3
- Stock
- 195
- In Stock ：
- 195
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-261-4, TO-261AA
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 4
- Voltage - Rated DC :
- -100V
- Power Dissipation :
- 3W
- Number of Elements :
- 1
- Element Configuration :
- Single
- Termination :
- SMD/SMT
- Pbfree Code :
- No
- Gain Bandwidth Product :
- 125MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Application :
- SWITCHING
- Max Collector Current :
- 5A
- Terminal Form :
- Gull wing
- REACH SVHC :
- No SVHC
- Frequency :
- 125MHz
- Packaging :
- Cut Tape (CT)
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Polarity/Channel Type :
- PNP
- Weight :
- 7.994566mg
- JESD-30 Code :
- R-PDSO-G4
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Published :
- 2006
- Base Part Number :
- FZT953
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- -420mV
- Max Power Dissipation :
- 3W
- hFE Min :
- 100
- Width :
- 3.7mm
- Terminal Position :
- Dual
- Frequency - Transition :
- 120MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 100V
- Emitter Base Voltage (VEBO) :
- 6V
- RoHS Status :
- ROHS3 Compliant
- Max Breakdown Voltage :
- 100V
- Number of Pins :
- 3
- Terminal Finish :
- Matte Tin (Sn)
- Current Rating :
- -5A
- Lead Free :
- Lead Free
- Transistor Type :
- PNP
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Length :
- 6.7mm
- Height :
- 1.65mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 2A 1V
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Collector Base Voltage (VCBO) :
- 140V
- Vce Saturation (Max) @ Ib, Ic :
- 460mV @ 500mA, 5A
- Transition Frequency :
- 125MHz
- Mounting Type :
- Surface Mount
- Datasheets
- FZT953TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT953TA Overview
In this device, the DC current gain is 100 @ 2A 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of -420mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 460mV @ 500mA, 5A.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-5A).125MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.Maximum collector currents can be below 5A volts.
FZT953TA Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -420mV
the vce saturation(Max) is 460mV @ 500mA, 5A
the emitter base voltage is kept at 6V
the current rating of this device is -5A
a transition frequency of 125MHz
FZT953TA Applications
There are a lot of Diodes Incorporated
FZT953TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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