FZT949TA
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- Mfr.Part #
- FZT949TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 5.5A SOT223-3
- Stock
- 178
- In Stock ：
- 178
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Terminal Finish :
- Matte Tin (Sn)
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Continuous Collector Current :
- -5.5A
- Pbfree Code :
- No
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-261-4, TO-261AA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- PNP
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- -30V
- Reach Compliance Code :
- not_compliant
- Collector Base Voltage (VCBO) :
- 50V
- Factory Lead Time :
- 15 Weeks
- Height :
- 1.65mm
- Packaging :
- Cut Tape (CT)
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 5.5A
- Vce Saturation (Max) @ Ib, Ic :
- 440mV @ 500mA, 5.5A
- Number of Pins :
- 4
- Power Dissipation :
- 3W
- Length :
- 6.7mm
- Qualification Status :
- Not Qualified
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Number of Terminations :
- 4
- Number of Elements :
- 1
- Width :
- 3.7mm
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Base Part Number :
- FZT949
- Max Power Dissipation :
- 3W
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 30V
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- -440mV
- Weight :
- 7.994566mg
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 1V
- Terminal Position :
- Dual
- Current Rating :
- -5.5A
- Frequency :
- 100MHz
- Published :
- 2006
- Transition Frequency :
- 100MHz
- Mount :
- Surface Mount
- Gain Bandwidth Product :
- 100MHz
- Datasheets
- FZT949TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT949TA Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 100 @ 1A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -440mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 440mV @ 500mA, 5.5A.Single BJT transistor is recommended to keep the continuous collector voltage at -5.5A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is -5.5A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 100MHz.The breakdown input voltage is 30V volts.Single BJT transistor is possible to have a collector current as low as 5.5A volts at Single BJT transistors maximum.
FZT949TA Features
the DC current gain for this device is 100 @ 1A 1V
a collector emitter saturation voltage of -440mV
the vce saturation(Max) is 440mV @ 500mA, 5.5A
the emitter base voltage is kept at 6V
the current rating of this device is -5.5A
a transition frequency of 100MHz
FZT949TA Applications
There are a lot of Diodes Incorporated
FZT949TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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