FZT957TA
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- Mfr.Part #
- FZT957TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 300V 1A SOT223-3
- Stock
- 9,093
- In Stock ：
- 9,093
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Max Power Dissipation :
- 3W
- Power Dissipation :
- 3W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lead Free :
- Lead Free
- Pbfree Code :
- No
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Collector Base Voltage (VCBO) :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- -300V
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 10V
- Max Collector Current :
- 1A
- Polarity/Channel Type :
- PNP
- Collector Emitter Breakdown Voltage :
- 300V
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 240mV @ 300mA, 1A
- Number of Elements :
- 1
- Transistor Type :
- PNP
- Collector Emitter Voltage (VCEO) :
- 300V
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -1A
- Base Part Number :
- FZT957
- Transition Frequency :
- 85MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -170mV
- Terminal Position :
- Dual
- Height :
- 1.65mm
- Gain Bandwidth Product :
- 85MHz
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- Frequency :
- 85MHz
- Width :
- 3.7mm
- REACH SVHC :
- No SVHC
- Current Rating :
- -1A
- JESD-609 Code :
- e3
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- Max Breakdown Voltage :
- 300V
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 4
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 4
- Length :
- 6.7mm
- Terminal Form :
- Gull wing
- Datasheets
- FZT957TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT957TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -170mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 240mV @ 300mA, 1A.Continuous collector voltages of -1A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 6V.Its current rating is -1A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 85MHz.Single BJT transistor can take a breakdown input voltage of 300V volts.During maximum operation, collector current can be as low as 1A volts.
FZT957TA Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of -170mV
the vce saturation(Max) is 240mV @ 300mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is -1A
a transition frequency of 85MHz
FZT957TA Applications
There are a lot of Diodes Incorporated
FZT957TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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