FZT956TA
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- Mfr.Part #
- FZT956TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 200V 2A SOT223-3
- Stock
- 5,892
- In Stock ：
- 5,892
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 3W
- REACH SVHC :
- No SVHC
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Radiation Hardening :
- No
- Published :
- 2006
- Height :
- 1.65mm
- Weight :
- 7.994566mg
- Terminal Form :
- Gull wing
- Transistor Application :
- SWITCHING
- Mount :
- Surface Mount
- Voltage - Rated DC :
- -200V
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Operating Temperature :
- -55°C~150°C TJ
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 200V
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Length :
- 6.7mm
- Power Dissipation :
- 3W
- Number of Pins :
- 4
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Matte Tin (Sn)
- Terminal Position :
- Dual
- Transition Frequency :
- 110MHz
- Collector Emitter Saturation Voltage :
- -275mV
- Package / Case :
- TO-261-4, TO-261AA
- Current Rating :
- -2A
- JESD-609 Code :
- e3
- Max Collector Current :
- 2A
- Number of Terminations :
- 4
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Breakdown Voltage :
- 200V
- Frequency :
- 110MHz
- Element Configuration :
- Single
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Voltage (VCEO) :
- 200V
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 300mA, 3A
- Lead Free :
- Lead Free
- Width :
- 3.7mm
- Continuous Collector Current :
- -2A
- Number of Elements :
- 1
- Base Part Number :
- FZT956
- Emitter Base Voltage (VEBO) :
- -7V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 1A 5V
- Gain Bandwidth Product :
- 110MHz
- Polarity/Channel Type :
- PNP
- Pbfree Code :
- No
- Collector Base Voltage (VCBO) :
- 220V
- Datasheets
- FZT956TA
PNP -55°C~150°C TJ 50nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT956TA Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 5V.The collector emitter saturation voltage is -275mV, which allows for maximum design flexibility.When VCE saturation is 370mV @ 300mA, 3A, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -2A for high efficiency.Emitter base voltages of -7V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -2A.In the part, the transition frequency is 110MHz.This device can take an input voltage of 200V volts before it breaks down.A maximum collector current of 2A volts can be achieved.
FZT956TA Features
the DC current gain for this device is 100 @ 1A 5V
a collector emitter saturation voltage of -275mV
the vce saturation(Max) is 370mV @ 300mA, 3A
the emitter base voltage is kept at -7V
the current rating of this device is -2A
a transition frequency of 110MHz
FZT956TA Applications
There are a lot of Diodes Incorporated
FZT956TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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