FZT593TA
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- Mfr.Part #
- FZT593TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT223-3
- Stock
- 1,051
- In Stock ：
- 1,051
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Mounting Type :
- Surface Mount
- Collector Emitter Saturation Voltage :
- -300mV
- Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-261-4, TO-261AA
- Max Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 120V
- Number of Pins :
- 4
- Continuous Collector Current :
- -1A
- Frequency :
- 50MHz
- Length :
- 6.7mm
- Base Part Number :
- FZT593
- Voltage - Rated DC :
- -100V
- REACH SVHC :
- No SVHC
- Published :
- 2000
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Number of Elements :
- 1
- Max Collector Current :
- 1A
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 50MHz
- Current - Collector Cutoff (Max) :
- 100nA
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 4
- JESD-609 Code :
- e3
- Collector Emitter Breakdown Voltage :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Pbfree Code :
- No
- Radiation Hardening :
- No
- Transistor Type :
- PNP
- ECCN Code :
- EAR99
- Height :
- 1.65mm
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 100V
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Current Rating :
- -1A
- Width :
- 3.7mm
- Terminal Position :
- Dual
- Weight :
- 7.994566mg
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- SWITCHING
- Terminal Form :
- Gull wing
- Max Breakdown Voltage :
- 100V
- Factory Lead Time :
- 15 Weeks
- Datasheets
- FZT593TA
FZT593TA Documents
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT593TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 1A volts at its maximum.
FZT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
FZT593TA Applications
There are a lot of Diodes Incorporated
FZT593TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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