FZT593TA
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- Mfr.Part #
- FZT593TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT223-3
- Stock
- 1,051
- In Stock ：
- 1,051
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Terminal Form :
- Gull wing
- Gain Bandwidth Product :
- 50MHz
- Package / Case :
- TO-261-4, TO-261AA
- Height :
- 1.65mm
- Weight :
- 7.994566mg
- Frequency :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Collector Emitter Saturation Voltage :
- -300mV
- Factory Lead Time :
- 15 Weeks
- Collector Base Voltage (VCBO) :
- 120V
- Number of Terminations :
- 4
- Terminal Position :
- Dual
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 4
- Base Part Number :
- FZT593
- JESD-609 Code :
- e3
- Polarity/Channel Type :
- PNP
- Length :
- 6.7mm
- Published :
- 2000
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Collector Emitter Breakdown Voltage :
- 100V
- Mount :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Max Power Dissipation :
- 2W
- Max Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 1A
- Current Rating :
- -1A
- Voltage - Rated DC :
- -100V
- Collector Emitter Voltage (VCEO) :
- 100V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Power Dissipation :
- 2W
- Transistor Application :
- SWITCHING
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- PNP
- RoHS Status :
- ROHS3 Compliant
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA
- REACH SVHC :
- No SVHC
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- No
- Case Connection :
- COLLECTOR
- Width :
- 3.7mm
- ECCN Code :
- EAR99
- Continuous Collector Current :
- -1A
- Transition Frequency :
- 50MHz
- Peak Reflow Temperature (Cel) :
- 260
- Datasheets
- FZT593TA
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT593TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 1A volts at its maximum.
FZT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
FZT593TA Applications
There are a lot of Diodes Incorporated
FZT593TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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