FZT593TA
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- Mfr.Part #
- FZT593TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 100V 1A SOT223-3
- Stock
- 1,051
- In Stock ：
- 1,051
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Case Connection :
- COLLECTOR
- Collector Emitter Saturation Voltage :
- -300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Published :
- 2000
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 100V
- Terminal Form :
- Gull wing
- Height :
- 1.65mm
- Max Power Dissipation :
- 2W
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Collector Current :
- 1A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 50mA, 500mA
- Length :
- 6.7mm
- Peak Reflow Temperature (Cel) :
- 260
- Current - Collector Cutoff (Max) :
- 100nA
- Continuous Collector Current :
- -1A
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-261-4, TO-261AA
- Pbfree Code :
- No
- Voltage - Rated DC :
- -100V
- Base Part Number :
- FZT593
- Collector Base Voltage (VCBO) :
- 120V
- Lead Free :
- Lead Free
- Width :
- 3.7mm
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 4
- Terminal Finish :
- Matte Tin (Sn)
- Factory Lead Time :
- 15 Weeks
- Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Current Rating :
- -1A
- Weight :
- 7.994566mg
- Transistor Type :
- PNP
- Number of Pins :
- 4
- Polarity/Channel Type :
- PNP
- Frequency :
- 50MHz
- Max Breakdown Voltage :
- 100V
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Gain Bandwidth Product :
- 50MHz
- REACH SVHC :
- No SVHC
- Datasheets
- FZT593TA
FZT593TA Documents
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT593TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 5V.With a collector emitter saturation voltage of -300mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 50mA, 500mA.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 100V volts that it can take.Collector current can be as low as 1A volts at its maximum.
FZT593TA Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -300mV
the vce saturation(Max) is 300mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 50MHz
FZT593TA Applications
There are a lot of Diodes Incorporated
FZT593TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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