FZT589TA
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- Mfr.Part #
- FZT589TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SOT223-3
- Stock
- 23,028
- In Stock ：
- 23,028
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Max Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- -5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Finish :
- Matte Tin (Sn)
- Collector Emitter Saturation Voltage :
- -650mV
- Max Power Dissipation :
- 2W
- Vce Saturation (Max) @ Ib, Ic :
- 650mV @ 200mA, 2A
- Number of Pins :
- 4
- Weight :
- 7.994566mg
- Width :
- 3.7mm
- Voltage - Rated DC :
- -30V
- Frequency :
- 100MHz
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Surface Mount
- Pbfree Code :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- -1A
- Collector Emitter Voltage (VCEO) :
- 30V
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Packaging :
- Cut Tape (CT)
- Operating Temperature :
- -55°C~150°C TJ
- Transition Frequency :
- 100MHz
- Element Configuration :
- Single
- Max Collector Current :
- 1A
- Number of Elements :
- 1
- Case Connection :
- COLLECTOR
- Current Rating :
- -1A
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 100MHz
- Published :
- 2000
- Terminal Position :
- Dual
- REACH SVHC :
- No SVHC
- Collector Emitter Breakdown Voltage :
- 30V
- Length :
- 6.7mm
- Power Dissipation :
- 2W
- Collector Base Voltage (VCBO) :
- 50V
- Polarity/Channel Type :
- PNP
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.65mm
- Transistor Type :
- PNP
- Package / Case :
- TO-261-4, TO-261AA
- Radiation Hardening :
- No
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 8 Weeks
- ECCN Code :
- EAR99
- Datasheets
- FZT589TA
PNP -55°C~150°C TJ 100nA ICBO 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT589TA Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 500mA 2V.With a collector emitter saturation voltage of -650mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 650mV @ 200mA, 2A.In order to achieve high efficiency, the continuous collector voltage should be kept at -1A.If the emitter base voltage is kept at -5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.A transition frequency of 100MHz is present in the part.There is a breakdown input voltage of 30V volts that it can take.Collector current can be as low as 1A volts at its maximum.
FZT589TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 200mA, 2A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 100MHz
FZT589TA Applications
There are a lot of Diodes Incorporated
FZT589TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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