FZT549TA
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- Mfr.Part #
- FZT549TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 30V 1A SOT223-3
- Stock
- 2,610
- In Stock ：
- 2,610
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Continuous Collector Current :
- -1A
- Current Rating :
- -1A
- Collector Base Voltage (VCBO) :
- 35V
- Max Breakdown Voltage :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 750mV @ 200mA, 2A
- Transistor Element Material :
- SILICON
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Saturation Voltage :
- -750mV
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Application :
- SWITCHING
- Published :
- 2006
- Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- PNP
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 30V
- Gain Bandwidth Product :
- 100MHz
- Voltage - Rated DC :
- -30V
- Terminal Form :
- Gull wing
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Number of Pins :
- 4
- Height :
- 1.65mm
- Max Collector Current :
- 1A
- Mount :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- JESD-609 Code :
- e3
- Transition Frequency :
- 100MHz
- ECCN Code :
- EAR99
- Length :
- 6.7mm
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 15 Weeks
- Frequency :
- 100MHz
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Weight :
- 7.994566mg
- Number of Elements :
- 1
- Element Configuration :
- Single
- Base Part Number :
- FZT549
- Case Connection :
- COLLECTOR
- Width :
- 3.7mm
- Current - Collector Cutoff (Max) :
- 100nA
- Max Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Pbfree Code :
- No
- Datasheets
- FZT549TA
FZT549TA Documents
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT549TA Overview
DC current gain in this device equals 100 @ 500mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -750mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 750mV @ 200mA, 2A.Single BJT transistor is essential to maintain the continuous collector voltage at -1A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1A current rating.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 1A volts.
FZT549TA Features
the DC current gain for this device is 100 @ 500mA 2V
a collector emitter saturation voltage of -750mV
the vce saturation(Max) is 750mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -1A
a transition frequency of 100MHz
FZT549TA Applications
There are a lot of Diodes Incorporated
FZT549TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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