FZT558TA
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- Mfr.Part #
- FZT558TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.2A SOT223-3
- Stock
- 16,050
- In Stock ：
- 16,050
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Matte Tin (Sn)
- Lead Free :
- Lead Free
- Power Dissipation :
- 3W
- Max Collector Current :
- 200mA
- Case Connection :
- COLLECTOR
- Gain Bandwidth Product :
- 50MHz
- Continuous Collector Current :
- -200mA
- Max Power Dissipation :
- 2W
- Height :
- 1.65mm
- Element Configuration :
- Single
- Base Part Number :
- FZT558
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 400V
- Pbfree Code :
- No
- Transistor Element Material :
- SILICON
- Transistor Type :
- PNP
- Emitter Base Voltage (VEBO) :
- -5V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 100nA
- Voltage - Rated DC :
- -400V
- Number of Terminations :
- 4
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Published :
- 2006
- Current Rating :
- -200mA
- Reach Compliance Code :
- not_compliant
- Transition Frequency :
- 50MHz
- JESD-30 Code :
- R-PDSO-G4
- Transistor Application :
- SWITCHING
- Collector Emitter Breakdown Voltage :
- 400V
- Max Breakdown Voltage :
- 400V
- Factory Lead Time :
- 13 Weeks
- Length :
- 6.7mm
- Collector Emitter Voltage (VCEO) :
- 400V
- Terminal Form :
- Gull wing
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- Number of Elements :
- 1
- Width :
- 3.7mm
- REACH SVHC :
- No SVHC
- Power - Max :
- 2W
- Collector Emitter Saturation Voltage :
- -500mV
- Packaging :
- Cut Tape (CT)
- Qualification Status :
- Not Qualified
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Terminal Position :
- Dual
- Weight :
- 7.994566mg
- Polarity/Channel Type :
- PNP
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Package / Case :
- TO-261-4, TO-261AA
- Mount :
- Surface Mount
- Frequency :
- 50MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- FZT558TA
FZT558TA Documents
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT558TA Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 6mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 200mA volts.
FZT558TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 50MHz
FZT558TA Applications
There are a lot of Diodes Incorporated
FZT558TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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