FZT558TA
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- Mfr.Part #
- FZT558TA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 400V 0.2A SOT223-3
- Stock
- 16,050
- In Stock ：
- 16,050
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 50MHz
- Polarity/Channel Type :
- PNP
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 400V
- Mounting Type :
- Surface Mount
- Power - Max :
- 2W
- Power Dissipation :
- 3W
- Pbfree Code :
- No
- Continuous Collector Current :
- -200mA
- Collector Emitter Saturation Voltage :
- -500mV
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- Base Part Number :
- FZT558
- Package / Case :
- TO-261-4, TO-261AA
- Current - Collector Cutoff (Max) :
- 100nA
- Qualification Status :
- Not Qualified
- Mount :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G4
- Voltage - Rated DC :
- -400V
- Width :
- 3.7mm
- Published :
- 2006
- Transistor Type :
- PNP
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 6mA, 50mA
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.7mm
- Gain Bandwidth Product :
- 50MHz
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- -5V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Number of Terminations :
- 4
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 50mA 10V
- Terminal Position :
- Dual
- Height :
- 1.65mm
- Packaging :
- Cut Tape (CT)
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 400V
- Terminal Finish :
- Matte Tin (Sn)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 2W
- Max Collector Current :
- 200mA
- Number of Elements :
- 1
- Frequency :
- 50MHz
- Current Rating :
- -200mA
- Max Breakdown Voltage :
- 400V
- Factory Lead Time :
- 13 Weeks
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 400V
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Datasheets
- FZT558TA
FZT558TA Documents
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Cut Tape (CT) Surface Mount
FZT558TA Overview
DC current gain in this device equals 100 @ 50mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 6mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at -200mA to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -200mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 400V volts.In extreme cases, the collector current can be as low as 200mA volts.
FZT558TA Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at -5V
the current rating of this device is -200mA
a transition frequency of 50MHz
FZT558TA Applications
There are a lot of Diodes Incorporated
FZT558TA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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