FZT1151ATA
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- Mfr.Part #
- FZT1151ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT223-3
- Stock
- 247
- In Stock ：
- 247
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Continuous Collector Current :
- -3A
- Number of Pins :
- 3
- ECCN Code :
- EAR99
- Base Part Number :
- FZT1151A
- Peak Reflow Temperature (Cel) :
- 260
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 40V
- Polarity/Channel Type :
- PNP
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Transistor Element Material :
- SILICON
- Current Rating :
- -3A
- Pbfree Code :
- No
- Mount :
- Surface Mount
- Transistor Application :
- SWITCHING
- Collector Emitter Voltage (VCEO) :
- 40V
- Mounting Type :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Pin Count :
- 4
- Max Breakdown Voltage :
- 40V
- Frequency :
- 145MHz
- Terminal Position :
- Dual
- Width :
- 3.7mm
- Voltage - Rated DC :
- -40V
- Power Dissipation :
- 2.5W
- Number of Terminations :
- 4
- Gain Bandwidth Product :
- 145MHz
- Transition Frequency :
- 145MHz
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 7.994566mg
- Terminal Finish :
- Matte Tin (Sn)
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250mA, 3A
- Element Configuration :
- Single
- JESD-30 Code :
- R-PDSO-G4
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Saturation Voltage :
- -200mV
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Length :
- 6.7mm
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Package / Case :
- TO-261-4, TO-261AA
- Height :
- 1.65mm
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2006
- Max Collector Current :
- 3A
- Terminal Form :
- Gull wing
- Max Power Dissipation :
- 2.5W
- Transistor Type :
- PNP
- Datasheets
- FZT1151ATA
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT1151ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 250mA, 3A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 145MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 3A volts.
FZT1151ATA Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 250mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 145MHz
FZT1151ATA Applications
There are a lot of Diodes Incorporated
FZT1151ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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