FZT1151ATA
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- Mfr.Part #
- FZT1151ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS PNP 40V 3A SOT223-3
- Stock
- 247
- In Stock ：
- 247
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Mounting Type :
- Surface Mount
- JESD-30 Code :
- R-PDSO-G4
- RoHS Status :
- ROHS3 Compliant
- Terminal Position :
- Dual
- Polarity/Channel Type :
- PNP
- Max Power Dissipation :
- 2.5W
- Width :
- 3.7mm
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 145MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2006
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 250 @ 500mA 2V
- Collector Base Voltage (VCBO) :
- 45V
- Collector Emitter Breakdown Voltage :
- 40V
- Continuous Collector Current :
- -3A
- Base Part Number :
- FZT1151A
- Terminal Finish :
- Matte Tin (Sn)
- Pin Count :
- 4
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Transistor Element Material :
- SILICON
- Pbfree Code :
- No
- Radiation Hardening :
- No
- REACH SVHC :
- No SVHC
- Terminal Form :
- Gull wing
- Current - Collector Cutoff (Max) :
- 100nA
- Current Rating :
- -3A
- Transition Frequency :
- 145MHz
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 250mA, 3A
- Element Configuration :
- Single
- Max Breakdown Voltage :
- 40V
- Voltage - Rated DC :
- -40V
- Max Collector Current :
- 3A
- Factory Lead Time :
- 15 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- Collector Emitter Voltage (VCEO) :
- 40V
- Transistor Application :
- SWITCHING
- Weight :
- 7.994566mg
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2.5W
- Number of Terminations :
- 4
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Saturation Voltage :
- -200mV
- Transistor Type :
- PNP
- Operating Temperature :
- -55°C~150°C TJ
- ECCN Code :
- EAR99
- Height :
- 1.65mm
- Frequency :
- 145MHz
- Length :
- 6.7mm
- Case Connection :
- COLLECTOR
- Datasheets
- FZT1151ATA
FZT1151ATA Documents
PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT1151ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 500mA 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -200mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 300mV @ 250mA, 3A.Continuous collector voltages of -3A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -3A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 145MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 3A volts.
FZT1151ATA Features
the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 250mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 145MHz
FZT1151ATA Applications
There are a lot of Diodes Incorporated
FZT1151ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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