FZT1147ATA

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Mfr.Part #
FZT1147ATA
Manufacturer
Diodes Incorporated
Package / Case
TO-261-4, TO-261AA
Datasheet
Download
Description
TRANS PNP 12V 5A SOT223-3
Stock
3,919
In Stock :
3,919

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Manufacturer :
Diodes Incorporated
Product Category :
Transistors - Bipolar (BJT) - Single
Collector Emitter Saturation Voltage :
-250mV
Power Dissipation :
2.5W
Max Collector Current :
5A
Terminal Finish :
Matte Tin (Sn)
Terminal Form :
Gull wing
Number of Terminations :
4
Emitter Base Voltage (VEBO) :
5V
Width :
3.7mm
Voltage - Rated DC :
-12V
Pbfree Code :
No
Height :
1.65mm
Factory Lead Time :
15 Weeks
Length :
6.7mm
JESD-609 Code :
e3
Polarity/Channel Type :
PNP
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Voltage (VCEO) :
12V
Terminal Position :
Dual
ECCN Code :
EAR99
Number of Elements :
1
Continuous Collector Current :
-5A
Transition Frequency :
115MHz
Lead Free :
Lead Free
Package / Case :
TO-261-4, TO-261AA
Transistor Element Material :
SILICON
Max Breakdown Voltage :
12V
Pin Count :
4
Current - Collector Cutoff (Max) :
100nA
RoHS Status :
ROHS3 Compliant
Mounting Type :
Surface Mount
Number of Pins :
4
DC Current Gain (hFE) (Min) @ Ic, Vce :
270 @ 10mA 2V
Vce Saturation (Max) @ Ib, Ic :
400mV @ 50mA, 5A
Time@Peak Reflow Temperature-Max (s) :
40
Weight :
7.994566mg
Published :
2006
Frequency :
115MHz
Current Rating :
-5A
Radiation Hardening :
No
Case Connection :
COLLECTOR
Transistor Type :
PNP
Packaging :
Tape and Reel (TR)
Operating Temperature :
-55°C~150°C TJ
Peak Reflow Temperature (Cel) :
260
Collector Base Voltage (VCBO) :
15V
Collector Emitter Breakdown Voltage :
12V
Mount :
Surface Mount
Gain Bandwidth Product :
115MHz
REACH SVHC :
No SVHC
Max Power Dissipation :
2.5W
Element Configuration :
Single
Datasheets
FZT1147ATA
Introducing Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT1147ATA from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:4, Package / Case:TO-261-4, TO-261AA, Mounting Type:Surface Mount, Number of Pins:4, Operating Temperature:-55°C~150°C TJ, FZT1147ATA pinout, FZT1147ATA datasheet PDF, FZT1147ATA amp .Beyond Transistors - Bipolar (BJT) - Single Diodes Incorporated FZT1147ATA ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

Diodes Incorporated FZT1147ATA


PNP -55°C~150°C TJ 100nA 1 Elements 4 Terminations SILICON PNP TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount

FZT1147ATA Overview


DC current gain in this device equals 270 @ 10mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -250mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 400mV @ 50mA, 5A.Single BJT transistor is essential to maintain the continuous collector voltage at -5A to achieve high efficiency.An emitter's base voltage can be kept at 5V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -5A current rating.As a result, the part has a transition frequency of 115MHz.Breakdown input voltage is 12V volts.In extreme cases, the collector current can be as low as 5A volts.

FZT1147ATA Features


the DC current gain for this device is 270 @ 10mA 2V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 50mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is -5A
a transition frequency of 115MHz


FZT1147ATA Applications


There are a lot of Diodes Incorporated
FZT1147ATA applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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