FZT1051ATA
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- Mfr.Part #
- FZT1051ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 5A SOT223-3
- Stock
- 342
- In Stock ：
- 342
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 10nA
- Max Power Dissipation :
- 2.5W
- Polarity/Channel Type :
- NPN
- Pbfree Code :
- No
- Pin Count :
- 4
- Power Dissipation :
- 2.5W
- Frequency :
- 155MHz
- REACH SVHC :
- No SVHC
- Base Part Number :
- FZT1051A
- Transistor Application :
- SWITCHING
- Transition Frequency :
- 155MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1A 2V
- Weight :
- 7.994566mg
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 40V
- Number of Pins :
- 4
- Terminal Position :
- Dual
- Mount :
- Surface Mount
- Continuous Collector Current :
- 5A
- Length :
- 6.7mm
- Published :
- 2006
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 5A
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 340mV
- Collector Emitter Breakdown Voltage :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- RoHS Status :
- ROHS3 Compliant
- Width :
- 3.7mm
- Package / Case :
- TO-261-4, TO-261AA
- Max Breakdown Voltage :
- 40V
- Mounting Type :
- Surface Mount
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Current Rating :
- 5A
- Height :
- 1.65mm
- Radiation Hardening :
- No
- Factory Lead Time :
- 15 Weeks
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 5A
- Gain Bandwidth Product :
- 155MHz
- Packaging :
- Tape and Reel (TR)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 150V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Matte Tin (Sn)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- FZT1051ATA
FZT1051ATA Documents
NPN -55°C~150°C TJ 10nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT1051ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 340mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 340mV @ 100mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 155MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 5A volts.
FZT1051ATA Features
the DC current gain for this device is 270 @ 1A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 100mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 155MHz
FZT1051ATA Applications
There are a lot of Diodes Incorporated
FZT1051ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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