FZT1051ATA
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- Mfr.Part #
- FZT1051ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 5A SOT223-3
- Stock
- 342
- In Stock ：
- 342
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Max Collector Current :
- 5A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 40V
- Max Power Dissipation :
- 2.5W
- Collector Base Voltage (VCBO) :
- 150V
- Width :
- 3.7mm
- Terminal Form :
- Gull wing
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- 5A
- Operating Temperature :
- -55°C~150°C TJ
- Max Breakdown Voltage :
- 40V
- Transistor Element Material :
- SILICON
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Number of Terminations :
- 4
- ECCN Code :
- EAR99
- Power Dissipation :
- 2.5W
- Terminal Position :
- Dual
- Factory Lead Time :
- 15 Weeks
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 5A
- Base Part Number :
- FZT1051A
- Weight :
- 7.994566mg
- Collector Emitter Voltage (VCEO) :
- 40V
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2006
- Gain Bandwidth Product :
- 155MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1A 2V
- Packaging :
- Tape and Reel (TR)
- Frequency :
- 155MHz
- JESD-609 Code :
- e3
- Package / Case :
- TO-261-4, TO-261AA
- Number of Elements :
- 1
- Transition Frequency :
- 155MHz
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 5A
- Pin Count :
- 4
- Transistor Application :
- SWITCHING
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Number of Pins :
- 4
- Voltage - Rated DC :
- 60V
- Height :
- 1.65mm
- Collector Emitter Saturation Voltage :
- 340mV
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Current - Collector Cutoff (Max) :
- 10nA
- Pbfree Code :
- No
- Length :
- 6.7mm
- Datasheets
- FZT1051ATA
FZT1051ATA Documents
NPN -55°C~150°C TJ 10nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT1051ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 340mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 340mV @ 100mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 155MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 5A volts.
FZT1051ATA Features
the DC current gain for this device is 270 @ 1A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 100mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 155MHz
FZT1051ATA Applications
There are a lot of Diodes Incorporated
FZT1051ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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