FZT1051ATA
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- Mfr.Part #
- FZT1051ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 40V 5A SOT223-3
- Stock
- 342
- In Stock ：
- 342
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 7.994566mg
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Max Collector Current :
- 5A
- Power Dissipation :
- 2.5W
- ECCN Code :
- EAR99
- Number of Terminations :
- 4
- Transistor Type :
- NPN
- Polarity/Channel Type :
- NPN
- Width :
- 3.7mm
- Mount :
- Surface Mount
- Max Power Dissipation :
- 2.5W
- Height :
- 1.65mm
- JESD-609 Code :
- e3
- Pbfree Code :
- No
- RoHS Status :
- ROHS3 Compliant
- Number of Pins :
- 4
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Transition Frequency :
- 155MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Published :
- 2006
- Lead Free :
- Lead Free
- Current Rating :
- 5A
- Terminal Position :
- Dual
- Continuous Collector Current :
- 5A
- Length :
- 6.7mm
- Frequency :
- 155MHz
- Collector Base Voltage (VCBO) :
- 150V
- Gain Bandwidth Product :
- 155MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 15 Weeks
- Current - Collector Cutoff (Max) :
- 10nA
- Emitter Base Voltage (VEBO) :
- 5V
- Voltage - Rated DC :
- 60V
- Collector Emitter Breakdown Voltage :
- 40V
- Terminal Finish :
- Matte Tin (Sn)
- REACH SVHC :
- No SVHC
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 1A 2V
- Radiation Hardening :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 340mV
- Max Breakdown Voltage :
- 40V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Pin Count :
- 4
- Vce Saturation (Max) @ Ib, Ic :
- 340mV @ 100mA, 5A
- Terminal Form :
- Gull wing
- Base Part Number :
- FZT1051A
- Package / Case :
- TO-261-4, TO-261AA
- Datasheets
- FZT1051ATA
NPN -55°C~150°C TJ 10nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT1051ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 340mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 340mV @ 100mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 155MHz.Single BJT transistor can take a breakdown input voltage of 40V volts.During maximum operation, collector current can be as low as 5A volts.
FZT1051ATA Features
the DC current gain for this device is 270 @ 1A 2V
a collector emitter saturation voltage of 340mV
the vce saturation(Max) is 340mV @ 100mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 155MHz
FZT1051ATA Applications
There are a lot of Diodes Incorporated
FZT1051ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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