FZT1049ATA
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- Mfr.Part #
- FZT1049ATA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 5A SOT223-3
- Stock
- 640
- In Stock ：
- 640
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - Bipolar (BJT) - Single
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 2.5W
- Qualification Status :
- Not Qualified
- Vce Saturation (Max) @ Ib, Ic :
- 330mV @ 50mA, 5A
- Number of Pins :
- 3
- Continuous Collector Current :
- 5A
- Gain Bandwidth Product :
- 180MHz
- Power Dissipation :
- 2.5W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 180MHz
- JESD-30 Code :
- R-PDSO-G4
- Pbfree Code :
- No
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Width :
- 3.7mm
- Collector Emitter Breakdown Voltage :
- 25V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 300 @ 1A 2V
- Case Connection :
- COLLECTOR
- Voltage - Rated DC :
- 30V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- Dual
- Current Rating :
- 5A
- Collector Emitter Saturation Voltage :
- 330mV
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- Length :
- 6.7mm
- Reach Compliance Code :
- not_compliant
- Mounting Type :
- Surface Mount
- Pin Count :
- 4
- Weight :
- 7.994566mg
- Published :
- 1997
- Mount :
- Surface Mount
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- FZT1049A
- Emitter Base Voltage (VEBO) :
- 5V
- Max Breakdown Voltage :
- 25V
- Frequency :
- 180MHz
- Number of Elements :
- 1
- Collector Emitter Voltage (VCEO) :
- 25V
- Factory Lead Time :
- 15 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Form :
- Gull wing
- Collector Base Voltage (VCBO) :
- 80V
- hFE Min :
- 300
- Height :
- 1.65mm
- Max Collector Current :
- 5A
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Matte Tin (Sn)
- Element Configuration :
- Single
- Package / Case :
- TO-261-4, TO-261AA
- Number of Terminations :
- 4
- Current - Collector Cutoff (Max) :
- 10nA
- Datasheets
- FZT1049ATA
FZT1049ATA Documents
NPN -55°C~150°C TJ 10nA 1 Elements 4 Terminations SILICON NPN TO-261-4, TO-261AA Tape & Reel (TR) Surface Mount
FZT1049ATA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 300 @ 1A 2V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 330mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 330mV @ 50mA, 5A.Continuous collector voltages of 5A should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 180MHz.Single BJT transistor can take a breakdown input voltage of 25V volts.During maximum operation, collector current can be as low as 5A volts.
FZT1049ATA Features
the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of 330mV
the vce saturation(Max) is 330mV @ 50mA, 5A
the emitter base voltage is kept at 5V
the current rating of this device is 5A
a transition frequency of 180MHz
FZT1049ATA Applications
There are a lot of Diodes Incorporated
FZT1049ATA applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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