FQD1N80TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Number of Pins :

3

Lead Free :

Lead Free

Turn On Delay Time :

10 ns

Continuous Drain Current (ID) :

1mA

Input Capacitance (Ciss) (Max) @ Vds :

195pF @ 25V

Power Dissipation :

2.5W

Resistance :

20Ohm

ECCN Code :

EAR99

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

7.2nC @ 10V

Pbfree Code :

yes

Operating Mode :

ENHANCEMENT MODE

Vgs (Max) :

±30V

Weight :

260.37mg

Rds On (Max) @ Id, Vgs :

20 Ω @ 500mA, 10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

ROHS3 Compliant

Power Dissipation-Max :

2.5W Ta 45W Tc

Radiation Hardening :

No

JESD-30 Code :

R-PSSO-G2

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

5 V

Voltage - Rated DC :

800V

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

4 Weeks

Fall Time (Typ) :

25 ns

Series :

QFET®

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Contact Plating :

Tin

Pulsed Drain Current-Max (IDM) :

4A

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

1A

Turn-Off Delay Time :

15 ns

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs(th) (Max) @ Id :

5V @ 250μA

Drain to Source Breakdown Voltage :

800V

Rise Time :

25ns

Width :

6.1mm

REACH SVHC :

No SVHC

Mount :

Surface Mount

FET Type :

N-Channel

Avalanche Energy Rating (Eas) :

90 mJ

Drain Current-Max (Abs) (ID) :

1A

JESD-609 Code :

e3

Element Configuration :

Single

Height :

2.3mm

Published :

2001

Threshold Voltage :

5V

Number of Elements :

1

Number of Terminations :

2

Length :

6.6mm

Current - Continuous Drain (Id) @ 25°C :

1A Tc