FQD11P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

-9.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

45 ns

Operating Temperature :

-55°C~150°C TJ

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Length :

6.6mm

Voltage - Rated DC :

-60V

Height :

2.517mm

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

2.5W

Number of Channels :

1

Continuous Drain Current (ID) :

-9.4A

Number of Elements :

1

Series :

QFET®

Gate to Source Voltage (Vgs) :

30V

Element Configuration :

Single

Turn On Delay Time :

6.5 ns

Mount :

Surface Mount

Number of Pins :

3

Factory Lead Time :

4 Weeks

Case Connection :

DRAIN

Power Dissipation-Max :

2.5W Ta 38W Tc

Number of Terminations :

2

Terminal Finish :

Tin (Sn)

Vgs (Max) :

±30V

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Published :

2004

Rise Time :

40ns

REACH SVHC :

No SVHC

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

ECCN Code :

EAR99

Turn-Off Delay Time :

15 ns

FET Type :

P-Channel

Current - Continuous Drain (Id) @ 25°C :

9.4A Tc

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

6.1mm

Drain to Source Voltage (Vdss) :

60V

Input Capacitance (Ciss) (Max) @ Vds :

550pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Transistor Element Material :

SILICON

Resistance :

185mOhm

Drain to Source Breakdown Voltage :

-60V

Rds On (Max) @ Id, Vgs :

185m Ω @ 4.7A, 10V

Threshold Voltage :

-4V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Weight :

260.37mg

Max Junction Temperature (Tj) :

150°C

Lead Free :

Lead Free

Transistor Application :

SWITCHING