FQD11P06TM

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Mfr.Part #
FQD11P06TM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET P-CH 60V 9.4A DPAK
Stock
10,467
In Stock :
10,467

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Width :
6.1mm
Operating Mode :
ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds :
550pF @ 25V
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Fall Time (Typ) :
45 ns
Power Dissipation-Max :
2.5W Ta 38W Tc
Operating Temperature :
-55°C~150°C TJ
Drain to Source Voltage (Vdss) :
60V
Published :
2004
Transistor Application :
SWITCHING
Continuous Drain Current (ID) :
-9.4A
Pbfree Code :
yes
Rds On (Max) @ Id, Vgs :
185m Ω @ 4.7A, 10V
Element Configuration :
Single
Number of Channels :
1
Lead Free :
Lead Free
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
ECCN Code :
EAR99
JESD-609 Code :
e3
Power Dissipation :
2.5W
Length :
6.6mm
Height :
2.517mm
Turn On Delay Time :
6.5 ns
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Terminal Finish :
Tin (Sn)
Current - Continuous Drain (Id) @ 25°C :
9.4A Tc
Mounting Type :
Surface Mount
Drain to Source Breakdown Voltage :
-60V
Voltage - Rated DC :
-60V
Factory Lead Time :
4 Weeks
Turn-Off Delay Time :
15 ns
Vgs(th) (Max) @ Id :
4V @ 250µA
Transistor Element Material :
SILICON
Weight :
260.37mg
Radiation Hardening :
No
Number of Terminations :
2
Terminal Form :
Gull wing
Rise Time :
40ns
Threshold Voltage :
-4V
JESD-30 Code :
R-PSSO-G2
Gate to Source Voltage (Vgs) :
30V
Max Junction Temperature (Tj) :
150°C
Drive Voltage (Max Rds On,Min Rds On) :
10V
Mount :
Surface Mount
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
Case Connection :
DRAIN
Number of Pins :
3
FET Type :
P-Channel
Series :
QFET®
Current Rating :
-9.4A
Resistance :
185mOhm
REACH SVHC :
No SVHC
Vgs (Max) :
±30V
Datasheets
FQD11P06TM
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD11P06TM from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Operating Temperature:-55°C~150°C TJ, Number of Channels:1, Mounting Type:Surface Mount, Number of Terminations:2, Number of Pins:3, FQD11P06TM pinout, FQD11P06TM datasheet PDF, FQD11P06TM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD11P06TM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD11P06TM


P-Channel Tape & Reel (TR) 185m Ω @ 4.7A, 10V ±30V 550pF @ 25V 17nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD11P06TM Description

The FQD11P06TM is a P-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor using its own planarstripe and DMOS technology. This sophisticated MOSFET technology has been specifically designed to deliver excellent switching performance and strong avalanche energy strength while reducing on-state resistance.

FQD11P06TM Features

-9.4A -60 V, Ros(on)= 185 mΩ (Max.) @Vcs=-10 V, lD=-4.7 A
Low Gate Charge (Typ. 13 nC)
Low Crss (Typ. 45 pF)
100% Avalanche Tested

FQD11P06TM Application
Switched mode power supply
Audio amplifiers
Direct current motor control
Variable switching power applications
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