FQD11P06TM
- Mfr.Part #
- FQD11P06TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 9.4A DPAK
- Stock
- 10,467
- In Stock :
- 10,467
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Width :
- 6.1mm
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 550pF @ 25V
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Fall Time (Typ) :
- 45 ns
- Power Dissipation-Max :
- 2.5W Ta 38W Tc
- Operating Temperature :
- -55°C~150°C TJ
- Drain to Source Voltage (Vdss) :
- 60V
- Published :
- 2004
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- -9.4A
- Pbfree Code :
- yes
- Rds On (Max) @ Id, Vgs :
- 185m Ω @ 4.7A, 10V
- Element Configuration :
- Single
- Number of Channels :
- 1
- Lead Free :
- Lead Free
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Power Dissipation :
- 2.5W
- Length :
- 6.6mm
- Height :
- 2.517mm
- Turn On Delay Time :
- 6.5 ns
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Terminal Finish :
- Tin (Sn)
- Current - Continuous Drain (Id) @ 25°C :
- 9.4A Tc
- Mounting Type :
- Surface Mount
- Drain to Source Breakdown Voltage :
- -60V
- Voltage - Rated DC :
- -60V
- Factory Lead Time :
- 4 Weeks
- Turn-Off Delay Time :
- 15 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- Weight :
- 260.37mg
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Terminal Form :
- Gull wing
- Rise Time :
- 40ns
- Threshold Voltage :
- -4V
- JESD-30 Code :
- R-PSSO-G2
- Gate to Source Voltage (Vgs) :
- 30V
- Max Junction Temperature (Tj) :
- 150°C
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Mount :
- Surface Mount
- RoHS Status :
- ROHS3 Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Case Connection :
- DRAIN
- Number of Pins :
- 3
- FET Type :
- P-Channel
- Series :
- QFET®
- Current Rating :
- -9.4A
- Resistance :
- 185mOhm
- REACH SVHC :
- No SVHC
- Vgs (Max) :
- ±30V
- Datasheets
- FQD11P06TM

P-Channel Tape & Reel (TR) 185m Ω @ 4.7A, 10V ±30V 550pF @ 25V 17nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
The FQD11P06TM is a P-Channel enhancement mode power MOSFET manufactured by Fairchild Semiconductor using its own planarstripe and DMOS technology. This sophisticated MOSFET technology has been specifically designed to deliver excellent switching performance and strong avalanche energy strength while reducing on-state resistance.
FQD11P06TM Features
-9.4A -60 V, Ros(on)= 185 mΩ (Max.) @Vcs=-10 V, lD=-4.7 A
Low Gate Charge (Typ. 13 nC)
Low Crss (Typ. 45 pF)
100% Avalanche Tested
FQD11P06TM Application
Switched mode power supply
Audio amplifiers
Direct current motor control
Variable switching power applications
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