FQD12N20LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

9A Tc

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Resistance :

280mOhm

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

21nC @ 5V

Lead Free :

Lead Free

Height :

2.3mm

Published :

2001

Series :

QFET®

Number of Terminations :

2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Turn-Off Delay Time :

60 ns

Power Dissipation :

2.5W

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Rise Time :

190ns

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

1

Pbfree Code :

yes

Mount :

Surface Mount

ECCN Code :

EAR99

Width :

6.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transistor Element Material :

SILICON

Weight :

260.37mg

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Fall Time (Typ) :

120 ns

Length :

6.6mm

Operating Mode :

ENHANCEMENT MODE

Voltage - Rated DC :

200V

Gate to Source Voltage (Vgs) :

20V

Threshold Voltage :

2V

Factory Lead Time :

7 Weeks

Vgs(th) (Max) @ Id :

2V @ 250μA

Drain to Source Breakdown Voltage :

200V

Continuous Drain Current (ID) :

9A

Terminal Form :

Gull wing

Turn On Delay Time :

15 ns

Packaging :

Tape and Reel (TR)

JESD-30 Code :

R-PSSO-G2

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Input Capacitance (Ciss) (Max) @ Vds :

1080pF @ 25V

Radiation Hardening :

No

Power Dissipation-Max :

2.5W Ta 55W Tc

Current Rating :

9A

Element Configuration :

Single

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

9A

Nominal Vgs :

2 V

Terminal Finish :

Tin (Sn)

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.5A, 10V