FQD12N20TF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.28Ohm

Operating Temperature :

-55°C~150°C TJ

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

36A

FET Type :

N-Channel

Mounting Type :

Surface Mount

Vgs (Max) :

±30V

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation-Max :

2.5W Ta 55W Tc

Pin Count :

3

Vgs(th) (Max) @ Id :

5V @ 250μA

Transistor Application :

SWITCHING

Series :

QFET®

Number of Elements :

1

Avalanche Energy Rating (Eas) :

210 mJ

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

23nC @ 10V

Drain to Source Voltage (Vdss) :

200V

Current - Continuous Drain (Id) @ 25°C :

9A Tc

Drain Current-Max (Abs) (ID) :

9A

Peak Reflow Temperature (Cel) :

260

JESD-609 Code :

e3

Terminal Position :

Single

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

JESD-30 Code :

R-PSSO-G2

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

DS Breakdown Voltage-Min :

200V

Rds On (Max) @ Id, Vgs :

280m Ω @ 4.5A, 10V

Input Capacitance (Ciss) (Max) @ Vds :

910pF @ 25V

Terminal Finish :

MATTE TIN