FQD10N20CTM
- Mfr.Part #
- FQD10N20CTM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 200V 7.8A DPAK
- Stock
- 46,361
- In Stock :
- 46,361
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- QFET®
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Mount :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 510pF @ 25V
- FET Type :
- N-Channel
- Terminal Form :
- Gull wing
- Power Dissipation :
- 50W
- Number of Terminations :
- 2
- Factory Lead Time :
- 8 Weeks
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Resistance :
- 360mOhm
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- JEDEC-95 Code :
- TO-252AA
- Length :
- 6.6mm
- Pbfree Code :
- yes
- Vgs (Max) :
- ±30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Surface Mount
- ECCN Code :
- EAR99
- Turn On Delay Time :
- 11 ns
- Contact Plating :
- Tin
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 50W Tc
- JESD-609 Code :
- e3
- Reach Compliance Code :
- not_compliant
- Voltage - Rated DC :
- 200V
- Drain to Source Breakdown Voltage :
- 200V
- Rds On (Max) @ Id, Vgs :
- 360m Ω @ 3.9A, 10V
- Gate to Source Voltage (Vgs) :
- 30V
- Qualification Status :
- Not Qualified
- Height :
- 2.3mm
- JESD-30 Code :
- R-PSSO-G2
- Threshold Voltage :
- 4V
- REACH SVHC :
- No SVHC
- Weight :
- 260.37mg
- Case Connection :
- DRAIN
- Rise Time :
- 92ns
- Number of Pins :
- 3
- Fall Time (Typ) :
- 72 ns
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- ROHS3 Compliant
- Operating Mode :
- ENHANCEMENT MODE
- Number of Elements :
- 1
- Current - Continuous Drain (Id) @ 25°C :
- 7.8A Tc
- Turn-Off Delay Time :
- 70 ns
- Current Rating :
- 7.8A
- Element Configuration :
- Single
- Additional Feature :
- FAST SWITCHING
- Width :
- 6.1mm
- Continuous Drain Current (ID) :
- 7.8A
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheets
- FQD10N20CTM
FQD10N20CTM Documents

N-Channel Tape & Reel (TR) 360m Ω @ 3.9A, 10V ±30V 510pF @ 25V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD10N20CTM Description
A patented planar stripe and DMOS technology are used to create the FQD10N20CTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic light ballasts can all benefit from FQD10N20CTM.
FQD10N20CTM Features
-
Low Crss ( Typ. 40.5pF)
-
100% avalanche tested
-
Low gate charge ( Typ. 20nC)
-
7.8A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 3.9A
FQD10N20CTM Applications
-
LED TV
-
CRT/RPTV
-
Other Industrial
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