FQD10N20CTM

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Mfr.Part #
FQD10N20CTM
Manufacturer
onsemi
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
MOSFET N-CH 200V 7.8A DPAK
Stock
46,361
In Stock :
46,361

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
REACH SVHC :
No SVHC
Length :
6.6mm
Transistor Element Material :
SILICON
Number of Pins :
3
Additional Feature :
FAST SWITCHING
Input Capacitance (Ciss) (Max) @ Vds :
510pF @ 25V
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Turn On Delay Time :
11 ns
Drive Voltage (Max Rds On,Min Rds On) :
10V
Power Dissipation-Max :
50W Tc
Power Dissipation :
50W
Element Configuration :
Single
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 10V
Qualification Status :
Not Qualified
Packaging :
Tape and Reel (TR)
Rise Time :
92ns
Reach Compliance Code :
not_compliant
Threshold Voltage :
4V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Pbfree Code :
yes
Series :
QFET®
Mount :
Surface Mount
Gate to Source Voltage (Vgs) :
30V
Number of Elements :
1
Vgs(th) (Max) @ Id :
4V @ 250µA
Lead Free :
Lead Free
Drain to Source Breakdown Voltage :
200V
Current - Continuous Drain (Id) @ 25°C :
7.8A Tc
Rds On (Max) @ Id, Vgs :
360m Ω @ 3.9A, 10V
JESD-609 Code :
e3
Weight :
260.37mg
Vgs (Max) :
±30V
Mounting Type :
Surface Mount
Operating Temperature :
-55°C~150°C TJ
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Terminations :
2
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
RoHS Status :
ROHS3 Compliant
Turn-Off Delay Time :
70 ns
Continuous Drain Current (ID) :
7.8A
Current Rating :
7.8A
Height :
2.3mm
Resistance :
360mOhm
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Width :
6.1mm
ECCN Code :
EAR99
JESD-30 Code :
R-PSSO-G2
Operating Mode :
ENHANCEMENT MODE
Contact Plating :
Tin
Factory Lead Time :
8 Weeks
Transistor Application :
SWITCHING
JEDEC-95 Code :
TO-252AA
Voltage - Rated DC :
200V
Terminal Form :
Gull wing
Case Connection :
DRAIN
Fall Time (Typ) :
72 ns
FET Type :
N-Channel
Introducing Transistors - FETs, MOSFETs - Single onsemi FQD10N20CTM from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, FQD10N20CTM pinout, FQD10N20CTM datasheet PDF, FQD10N20CTM amp .Beyond Transistors - FETs, MOSFETs - Single onsemi FQD10N20CTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi FQD10N20CTM


N-Channel Tape & Reel (TR) 360m Ω @ 3.9A, 10V ±30V 510pF @ 25V 26nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD10N20CTM Description


A patented planar stripe and DMOS technology are used to create the FQD10N20CTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, active power factor correction (PFC), and electronic light ballasts can all benefit from FQD10N20CTM.



FQD10N20CTM Features


  • Low Crss ( Typ. 40.5pF)

  • 100% avalanche tested

  • Low gate charge ( Typ. 20nC)

  • 7.8A, 200V, RDS(on) = 360mΩ(Max.) @VGS = 10 V, ID = 3.9A



FQD10N20CTM Applications


  • LED TV

  • CRT/RPTV

  • Other Industrial


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