FQD1N60TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

DS Breakdown Voltage-Min :

600V

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

Pin Count :

3

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Number of Terminations :

2

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V

Power Dissipation-Max :

2.5W Ta 30W Tc

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 500mA, 10V

Mounting Type :

Surface Mount

Series :

QFET®

Qualification Status :

COMMERCIAL

Vgs (Max) :

±30V

Drain to Source Voltage (Vdss) :

600V

Avalanche Energy Rating (Eas) :

50 mJ

Pulsed Drain Current-Max (IDM) :

4A

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

1A

Terminal Position :

Single

Terminal Form :

Gull wing

JESD-30 Code :

R-PSSO-G2

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

5V @ 250μA

Terminal Finish :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

1A Tc

Reach Compliance Code :

Unknown

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pbfree Code :

yes

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V