FQD1N60CTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Mount :

Surface Mount

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs (Max) :

±30V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Current Rating :

1A

Length :

6.6mm

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

6.2nC @ 10V

ECCN Code :

EAR99

Turn On Delay Time :

7 ns

Lead Free :

Lead Free

Weight :

260.37mg

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

Tin (Sn)

Threshold Voltage :

2V

Power Dissipation-Max :

2.5W Ta 28W Tc

Published :

2003

Drain Current-Max (Abs) (ID) :

1A

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

11.5 Ω @ 500mA, 10V

Number of Elements :

1

Drain to Source Breakdown Voltage :

600V

Power Dissipation :

2.5W

Fall Time (Typ) :

27 ns

Gate to Source Voltage (Vgs) :

30V

Factory Lead Time :

5 Weeks

Packaging :

Tape and Reel (TR)

Additional Feature :

AVALANCHE RATED

Vgs(th) (Max) @ Id :

4V @ 250µA

Radiation Hardening :

No

Mounting Type :

Surface Mount

Resistance :

11.5Ohm

Continuous Drain Current (ID) :

1A

Pulsed Drain Current-Max (IDM) :

4A

Operating Temperature :

-55°C~150°C TJ

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

1A Tc

FET Type :

N-Channel

REACH SVHC :

No SVHC

Case Connection :

DRAIN

Voltage - Rated DC :

600V

Rise Time :

21ns

Height :

2.3mm

RoHS Status :

ROHS3 Compliant

Series :

QFET®

Terminal Form :

Gull wing

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Terminations :

2

Width :

6.1mm