FQD1N50TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Pin Count :

3

Vgs (Max) :

±30V

Vgs(th) (Max) @ Id :

5V @ 250μA

Peak Reflow Temperature (Cel) :

260

Pulsed Drain Current-Max (IDM) :

4.4A

Gate Charge (Qg) (Max) @ Vgs :

5.5nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Surface Mount :

yes

Current - Continuous Drain (Id) @ 25°C :

1.1A Tc

Mounting Type :

Surface Mount

Number of Elements :

1

JESD-30 Code :

R-PSSO-G2

Series :

QFET®

JESD-609 Code :

e3

DS Breakdown Voltage-Min :

500V

Power Dissipation-Max :

2.5W Ta 25W Tc

Drain to Source Voltage (Vdss) :

500V

Case Connection :

DRAIN

Qualification Status :

COMMERCIAL

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Form :

Gull wing

Number of Terminations :

2

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

150pF @ 25V

FET Type :

N-Channel

Drain-source On Resistance-Max :

9Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Terminal Position :

Single

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

80 mJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Operating Temperature :

-55°C~150°C TJ

Rds On (Max) @ Id, Vgs :

9 Ω @ 550mA, 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

1.1A