FQD19N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

65 ns

Avalanche Energy Rating (Eas) :

220 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Mount :

Surface Mount

REACH SVHC :

No SVHC

Weight :

260.37mg

Vgs (Max) :

±25V

Reach Compliance Code :

not_compliant

Lead Free :

Lead Free

Number of Terminations :

2

Voltage - Rated DC :

100V

Turn On Delay Time :

7.5 ns

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

20 ns

Packaging :

Tape and Reel (TR)

Width :

6.1mm

Continuous Drain Current (ID) :

15.6A

Resistance :

100MOhm

Drain to Source Breakdown Voltage :

100V

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Qualification Status :

Not Qualified

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Contact Plating :

Tin

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Published :

2000

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Rating :

15.6A

Length :

6.6mm

Pulsed Drain Current-Max (IDM) :

62.4A

Threshold Voltage :

4V

Rise Time :

150ns

Factory Lead Time :

4 Weeks

Series :

QFET®

Number of Pins :

3

Power Dissipation-Max :

2.5W Ta 50W Tc

Power Dissipation :

2.5W

Height :

2.3mm

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Terminal Form :

Gull wing

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Case Connection :

DRAIN

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Current - Continuous Drain (Id) @ 25°C :

15.6A Tc

Element Configuration :

Single

Gate to Source Voltage (Vgs) :

25V

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.8A, 10V

Operating Temperature :

-55°C~150°C TJ