FQD19N10TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Vgs (Max) :

±25V

Reach Compliance Code :

not_compliant

FET Type :

N-Channel

JESD-609 Code :

e3

Series :

QFET®

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Published :

2000

Factory Lead Time :

4 Weeks

Voltage - Rated DC :

100V

Lead Free :

Lead Free

Length :

6.6mm

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.8A, 10V

Power Dissipation :

2.5W

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ

Turn-Off Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Fall Time (Typ) :

65 ns

Contact Plating :

Tin

Avalanche Energy Rating (Eas) :

220 mJ

Element Configuration :

Single

Number of Pins :

3

Terminal Form :

Gull wing

Mount :

Surface Mount

Qualification Status :

Not Qualified

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-30 Code :

R-PSSO-G2

REACH SVHC :

No SVHC

Operating Mode :

ENHANCEMENT MODE

Pbfree Code :

yes

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

7.5 ns

Width :

6.1mm

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Pulsed Drain Current-Max (IDM) :

62.4A

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

100V

Current Rating :

15.6A

Number of Elements :

1

Threshold Voltage :

4V

Weight :

260.37mg

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

15.6A Tc

Power Dissipation-Max :

2.5W Ta 50W Tc

Gate to Source Voltage (Vgs) :

25V

Height :

2.3mm

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drive Voltage (Max Rds On,Min Rds On) :

10V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Number of Terminations :

2

Continuous Drain Current (ID) :

15.6A

Resistance :

100MOhm

Input Capacitance (Ciss) (Max) @ Vds :

780pF @ 25V

Rise Time :

150ns