FQD19N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Length :

6.6mm

ECCN Code :

EAR99

Weight :

260.37mg

Operating Mode :

ENHANCEMENT MODE

Factory Lead Time :

6 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.8A, 10V

Series :

QFET®

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

FET Type :

N-Channel

Voltage - Rated DC :

100V

Gate to Source Voltage (Vgs) :

20V

Power Dissipation-Max :

2.5W Ta 50W Tc

Power Dissipation :

2.5W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

220 mJ

Fall Time (Typ) :

140 ns

Drain to Source Breakdown Voltage :

100V

Transistor Application :

SWITCHING

Width :

6.1mm

Turn-Off Delay Time :

20 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Pbfree Code :

yes

Contact Plating :

Tin

Number of Terminations :

2

Published :

2000

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

62.4A

Current - Continuous Drain (Id) @ 25°C :

15.6A Tc

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Case Connection :

DRAIN

Vgs (Max) :

±20V

Operating Temperature :

-55°C~150°C TJ

Turn On Delay Time :

14 ns

Threshold Voltage :

2V

JESD-609 Code :

e3

Continuous Drain Current (ID) :

15.6A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

REACH SVHC :

No SVHC

Number of Pins :

3

Height :

2.3mm

Rise Time :

410ns

Radiation Hardening :

No

Resistance :

100MOhm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Current Rating :

15.6A

Number of Elements :

1