FQD19N10LTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

870pF @ 25V

Drain-source On Resistance-Max :

0.11Ohm

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Drain Current-Max (Abs) (ID) :

15.6A

Vgs (Max) :

±20V

JESD-30 Code :

R-PSSO-G2

Surface Mount :

yes

Rds On (Max) @ Id, Vgs :

100m Ω @ 7.8A, 10V

DS Breakdown Voltage-Min :

100V

Terminal Finish :

MATTE TIN

Avalanche Energy Rating (Eas) :

220 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Series :

QFET®

Power Dissipation-Max :

2.5W Ta 50W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vgs(th) (Max) @ Id :

2V @ 250μA

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Terminal Form :

Gull wing

JESD-609 Code :

e3

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Pulsed Drain Current-Max (IDM) :

62.4A

FET Type :

N-Channel

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

15.6A Tc

Pin Count :

3

Pbfree Code :

yes

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V