FQD17P06TM
- Mfr.Part #
- FQD17P06TM
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET P-CH 60V 12A DPAK
- Stock
- 2,475
- In Stock :
- 2,475
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Operating Mode :
- ENHANCEMENT MODE
- Weight :
- 260.37mg
- JESD-609 Code :
- e3
- Turn On Delay Time :
- 13 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Breakdown Voltage :
- -60V
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Current Rating :
- -12A
- Published :
- 2014
- Threshold Voltage :
- -4V
- Element Configuration :
- Single
- Case Connection :
- DRAIN
- JESD-30 Code :
- R-PSSO-G2
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Gate to Source Voltage (Vgs) :
- 25V
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- -60V
- Length :
- 6.73mm
- Resistance :
- 135mOhm
- REACH SVHC :
- No SVHC
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Input Capacitance (Ciss) (Max) @ Vds :
- 900pF @ 25V
- Fall Time (Typ) :
- 60 ns
- Current - Continuous Drain (Id) @ 25°C :
- 12A Tc
- Number of Elements :
- 1
- Width :
- 6.22mm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Rds On (Max) @ Id, Vgs :
- 135m Ω @ 6A, 10V
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 22 ns
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Number of Terminations :
- 2
- Height :
- 2.39mm
- Pulsed Drain Current-Max (IDM) :
- 48A
- Packaging :
- Tape and Reel (TR)
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Rise Time :
- 100ns
- Vgs (Max) :
- ±25V
- Factory Lead Time :
- 4 Weeks
- FET Type :
- P-Channel
- Number of Pins :
- 3
- Continuous Drain Current (ID) :
- 12mA
- Power Dissipation-Max :
- 2.5W Ta 44W Tc
- Power Dissipation :
- 2.5W
- Drain to Source Voltage (Vdss) :
- 60V
- Mount :
- Surface Mount
- Series :
- QFET®
- Contact Plating :
- Tin
- Datasheets
- FQD17P06TM
FQD17P06TM Documents

P-Channel Tape & Reel (TR) 135m Ω @ 6A, 10V ±25V 900pF @ 25V 27nC @ 10V 60V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD17P06TM Description
FQD17P06TM is a -60v P-Channel QFET? Power MOSFET. The P-Channel enhancement mode power MOSFET FQD17P06TM is produced using a proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. The onsemi FQD17P06TM is suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQD17P06TM Features
-
-12A, -60V, RDS(on) = 135mΩ(Max.) @VGS = -10 V, ID = -6A
-
Low gate charge ( Typ. 21nC)
-
Low Crss ( Typ. 80pF)
-
100% avalanche tested
FQD17P06TM Applications
-
LCD TV
-
LED TV
-
PDP TV
-
Switched-mode power supplies
-
Audio amplifier
-
DC motor control
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