FQD17P06TM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Weight :

260.37mg

JESD-609 Code :

e3

Turn On Delay Time :

13 ns

Gate Charge (Qg) (Max) @ Vgs :

27nC @ 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Breakdown Voltage :

-60V

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Current Rating :

-12A

Published :

2014

Threshold Voltage :

-4V

Element Configuration :

Single

Case Connection :

DRAIN

JESD-30 Code :

R-PSSO-G2

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Gate to Source Voltage (Vgs) :

25V

Operating Temperature :

-55°C~150°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Voltage - Rated DC :

-60V

Length :

6.73mm

Resistance :

135mOhm

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

900pF @ 25V

Fall Time (Typ) :

60 ns

Current - Continuous Drain (Id) @ 25°C :

12A Tc

Number of Elements :

1

Width :

6.22mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

135m Ω @ 6A, 10V

Lead Free :

Lead Free

Turn-Off Delay Time :

22 ns

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Radiation Hardening :

No

Number of Terminations :

2

Height :

2.39mm

Pulsed Drain Current-Max (IDM) :

48A

Packaging :

Tape and Reel (TR)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Rise Time :

100ns

Vgs (Max) :

±25V

Factory Lead Time :

4 Weeks

FET Type :

P-Channel

Number of Pins :

3

Continuous Drain Current (ID) :

12mA

Power Dissipation-Max :

2.5W Ta 44W Tc

Power Dissipation :

2.5W

Drain to Source Voltage (Vdss) :

60V

Mount :

Surface Mount

Series :

QFET®

Contact Plating :

Tin