FQD17N08LTM
- Mfr.Part #
- FQD17N08LTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 12.9A TO252
- Stock
- 2,356
- In Stock :
- 2,356
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Vgs (Max) :
- ±20V
- Operating Temperature :
- -55°C~150°C TJ
- Radiation Hardening :
- No
- Current Rating :
- 12.9A
- Power Dissipation :
- 2.5W
- Continuous Drain Current (ID) :
- 12.9A
- Number of Pins :
- 3
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta 40W Tc
- Weight :
- 260.37mg
- Current - Continuous Drain (Id) @ 25°C :
- 12.9A Tc
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- 80V
- Operating Mode :
- ENHANCEMENT MODE
- Element Configuration :
- Single
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Finish :
- Tin (Sn)
- Factory Lead Time :
- 4 Weeks
- Packaging :
- Tape and Reel (TR)
- Voltage - Rated DC :
- 80V
- Fall Time (Typ) :
- 75 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Series :
- QFET®
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 6.45A, 10V
- Case Connection :
- DRAIN
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- JESD-30 Code :
- R-PSSO-G2
- Number of Terminations :
- 2
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 25V
- Terminal Form :
- Gull wing
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 11.5nC @ 5V
- Turn-Off Delay Time :
- 20 ns
- Gate to Source Voltage (Vgs) :
- 20V
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- RoHS Status :
- ROHS3 Compliant
- Turn On Delay Time :
- 7 ns
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Rise Time :
- 290ns
- FET Type :
- N-Channel
- Datasheets
- FQD17N08LTM
FQD17N08LTM Documents

N-Channel Tape & Reel (TR) 100m Ω @ 6.45A, 10V ±20V 520pF @ 25V 11.5nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD17N08LTM Overview
A device's maximal input capacitance is 520pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12.9A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 80V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
FQD17N08LTM Features
a continuous drain current (ID) of 12.9A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 20 ns
FQD17N08LTM Applications
There are a lot of ON Semiconductor
FQD17N08LTM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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