FQD17N08LTM
- Mfr.Part #
- FQD17N08LTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- MOSFET N-CH 80V 12.9A TO252
- Stock
- 2,356
- In Stock :
- 2,356
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 290ns
- Mounting Type :
- Surface Mount
- FET Type :
- N-Channel
- Power Dissipation :
- 2.5W
- Radiation Hardening :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Case Connection :
- DRAIN
- Pbfree Code :
- yes
- Factory Lead Time :
- 4 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Operating Mode :
- ENHANCEMENT MODE
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 25V
- Terminal Form :
- Gull wing
- Series :
- QFET®
- Number of Terminations :
- 2
- JESD-30 Code :
- R-PSSO-G2
- Vgs (Max) :
- ±20V
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 6.45A, 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 7 ns
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Drain to Source Breakdown Voltage :
- 80V
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 20 ns
- Number of Pins :
- 3
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Current Rating :
- 12.9A
- Power Dissipation-Max :
- 2.5W Ta 40W Tc
- Voltage - Rated DC :
- 80V
- Gate Charge (Qg) (Max) @ Vgs :
- 11.5nC @ 5V
- Current - Continuous Drain (Id) @ 25°C :
- 12.9A Tc
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin (Sn)
- Gate to Source Voltage (Vgs) :
- 20V
- Fall Time (Typ) :
- 75 ns
- Transistor Element Material :
- SILICON
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Continuous Drain Current (ID) :
- 12.9A
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Weight :
- 260.37mg
- RoHS Status :
- ROHS3 Compliant
- Transistor Application :
- SWITCHING
- Datasheets
- FQD17N08LTM

N-Channel Tape & Reel (TR) 100m Ω @ 6.45A, 10V ±20V 520pF @ 25V 11.5nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD17N08LTM Overview
A device's maximal input capacitance is 520pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 12.9A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 80V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 20 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 7 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (5V 10V).
FQD17N08LTM Features
a continuous drain current (ID) of 12.9A
a drain-to-source breakdown voltage of 80V voltage
the turn-off delay time is 20 ns
FQD17N08LTM Applications
There are a lot of ON Semiconductor
FQD17N08LTM applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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