FQD17N08LTF

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~150°C TJ

Vgs (Max) :

±20V

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

12.9A

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Pbfree Code :

yes

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.115Ohm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

JESD-30 Code :

R-PSSO-G2

Terminal Finish :

MATTE TIN

Number of Elements :

1

Terminal Position :

Single

Reach Compliance Code :

Unknown

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 5V

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

80V

Rds On (Max) @ Id, Vgs :

100m Ω @ 6.45A, 10V

DS Breakdown Voltage-Min :

80V

Power Dissipation-Max :

2.5W Ta 40W Tc

RoHS Status :

ROHS3 Compliant

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Pulsed Drain Current-Max (IDM) :

51.6A

Series :

QFET®

Avalanche Energy Rating (Eas) :

100 mJ

Current - Continuous Drain (Id) @ 25°C :

12.9A Tc

Operating Mode :

ENHANCEMENT MODE