FQD17N08LTF

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

Terminal Finish :

MATTE TIN

Drain Current-Max (Abs) (ID) :

12.9A

Series :

QFET®

Terminal Position :

Single

Power Dissipation-Max :

2.5W Ta 40W Tc

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Number of Elements :

1

Surface Mount :

yes

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±20V

Terminal Form :

Gull wing

Pulsed Drain Current-Max (IDM) :

51.6A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

Mounting Type :

Surface Mount

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

12.9A Tc

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

11.5nC @ 5V

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

100 mJ

Number of Terminations :

2

Qualification Status :

COMMERCIAL

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.115Ohm

DS Breakdown Voltage-Min :

80V

JESD-30 Code :

R-PSSO-G2

Peak Reflow Temperature (Cel) :

260

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

80V

Packaging :

Tape and Reel (TR)

Case Connection :

DRAIN

Rds On (Max) @ Id, Vgs :

100m Ω @ 6.45A, 10V