FQD13N10TM

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Factory Lead Time :

7 Weeks

Transistor Application :

SWITCHING

Contact Plating :

Tin

Length :

6.6mm

Current Rating :

10A

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Drain to Source Breakdown Voltage :

100V

Rise Time :

55ns

Weight :

260.37mg

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation-Max :

2.5W Ta 40W Tc

RoHS Status :

ROHS3 Compliant

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Published :

2001

Gate Charge (Qg) (Max) @ Vgs :

16nC @ 10V

Fall Time (Typ) :

25 ns

Mount :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

20 ns

Voltage - Rated DC :

100V

Input Capacitance (Ciss) (Max) @ Vds :

450pF @ 25V

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

180m Ω @ 5A, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

5 ns

Height :

2.3mm

Avalanche Energy Rating (Eas) :

95 mJ

Series :

QFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Resistance :

180mOhm

Number of Elements :

1

Operating Temperature :

-55°C~150°C TJ

Pbfree Code :

yes

Power Dissipation :

2.5W

FET Type :

N-Channel

Case Connection :

DRAIN

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

10A

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs (Max) :

±25V

Radiation Hardening :

No

REACH SVHC :

No SVHC

Width :

6.1mm

ECCN Code :

EAR99

Number of Terminations :

2

JESD-30 Code :

R-PSSO-G2

Number of Pins :

3

Element Configuration :

Single

Pulsed Drain Current-Max (IDM) :

40A

Gate to Source Voltage (Vgs) :

25V

Terminal Form :

Gull wing

Threshold Voltage :

4V

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)