FQD13N10LTM

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2000

Series :

QFET®

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PSSO-G2

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Weight :

260.37mg

Vgs(th) (Max) @ Id :

2V @ 250μA

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Avalanche Energy Rating (Eas) :

95 mJ

Power Dissipation :

2.5W

Power Dissipation-Max :

2.5W Ta 40W Tc

Gate Charge (Qg) (Max) @ Vgs :

12nC @ 5V

Width :

6.1mm

Length :

6.6mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

180m Ω @ 5A, 10V

Voltage - Rated DC :

100V

Pulsed Drain Current-Max (IDM) :

40A

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Height :

2.3mm

Terminal Form :

Gull wing

Number of Terminations :

2

Rise Time :

220ns

Threshold Voltage :

2V

Terminal Finish :

Tin (Sn)

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

520pF @ 25V

REACH SVHC :

No SVHC

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Drain to Source Breakdown Voltage :

100V

Number of Pins :

3

Drain-source On Resistance-Max :

0.2Ohm

Case Connection :

DRAIN

Pbfree Code :

yes

Factory Lead Time :

4 Weeks

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

22 ns

Current - Continuous Drain (Id) @ 25°C :

10A Tc

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Fall Time (Typ) :

72 ns

Current Rating :

10A

Turn On Delay Time :

7.5 ns

Continuous Drain Current (ID) :

10A