FQD13N10LTM
- Mfr.Part #
- FQD13N10LTM
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- POWER FIELD-EFFECT TRANSISTOR, 1
- Stock
- 7,993
- In Stock :
- 7,993
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Width :
- 6.1mm
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 72 ns
- Threshold Voltage :
- 2V
- Length :
- 6.6mm
- Power Dissipation :
- 2.5W
- Weight :
- 260.37mg
- Transistor Element Material :
- SILICON
- Input Capacitance (Ciss) (Max) @ Vds :
- 520pF @ 25V
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Published :
- 2000
- FET Type :
- N-Channel
- Avalanche Energy Rating (Eas) :
- 95 mJ
- Pulsed Drain Current-Max (IDM) :
- 40A
- Rise Time :
- 220ns
- Gate to Source Voltage (Vgs) :
- 20V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 day ago)
- Turn-Off Delay Time :
- 22 ns
- Mounting Type :
- Surface Mount
- Rds On (Max) @ Id, Vgs :
- 180m Ω @ 5A, 10V
- Pbfree Code :
- yes
- Vgs (Max) :
- ±20V
- Lead Free :
- Lead Free
- Number of Terminations :
- 2
- Height :
- 2.3mm
- Number of Pins :
- 3
- Factory Lead Time :
- 4 Weeks
- Turn On Delay Time :
- 7.5 ns
- Series :
- QFET®
- Operating Temperature :
- -55°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- REACH SVHC :
- No SVHC
- Drain-source On Resistance-Max :
- 0.2Ohm
- Radiation Hardening :
- No
- Voltage - Rated DC :
- 100V
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- JESD-30 Code :
- R-PSSO-G2
- Power Dissipation-Max :
- 2.5W Ta 40W Tc
- JESD-609 Code :
- e3
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Current Rating :
- 10A
- Drain to Source Breakdown Voltage :
- 100V
- Gate Charge (Qg) (Max) @ Vgs :
- 12nC @ 5V
- Continuous Drain Current (ID) :
- 10A
- Current - Continuous Drain (Id) @ 25°C :
- 10A Tc
- Terminal Finish :
- Tin (Sn)
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Case Connection :
- DRAIN
- Datasheets
- FQD13N10LTM

N-Channel Tape & Reel (TR) 180m Ω @ 5A, 10V ±20V 520pF @ 25V 12nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63
FQD13N10LTM Description
A patented planar stripe and DMOS technology are used to create the FQD13N10LTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all possible with these devices.
FQD13N10LTM Features
-
Low Crss ( Typ. 20pF)
-
100% avalanche tested
-
Low gate charge ( Typ. 8.7nC)
-
10A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 5A
-
Low Level Gate Drive Requirement Allowing Direct Operation Form Logic Drivers
FQD13N10LTM Applications
-
LCD TV
-
LED TV
-
Power supplies
-
Audio amplifier
-
Switching power applications
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