FQD13N10LTM

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Mfr.Part #
FQD13N10LTM
Manufacturer
Fairchild Semiconductor
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Datasheet
Download
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Stock
7,993
In Stock :
7,993

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Transistor Application :
SWITCHING
Power Dissipation :
2.5W
FET Type :
N-Channel
Avalanche Energy Rating (Eas) :
95 mJ
Gate to Source Voltage (Vgs) :
20V
Packaging :
Tape and Reel (TR)
Factory Lead Time :
4 Weeks
Radiation Hardening :
No
Series :
QFET®
Element Configuration :
Single
Fall Time (Typ) :
72 ns
Length :
6.6mm
Voltage - Rated DC :
100V
Turn-Off Delay Time :
22 ns
Pulsed Drain Current-Max (IDM) :
40A
Current - Continuous Drain (Id) @ 25°C :
10A Tc
Vgs (Max) :
±20V
Drain-source On Resistance-Max :
0.2Ohm
Weight :
260.37mg
Transistor Element Material :
SILICON
Package / Case :
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Terminations :
2
Height :
2.3mm
Drive Voltage (Max Rds On,Min Rds On) :
5V 10V
Published :
2000
Power Dissipation-Max :
2.5W Ta 40W Tc
Number of Elements :
1
Input Capacitance (Ciss) (Max) @ Vds :
520pF @ 25V
JESD-609 Code :
e3
Pbfree Code :
yes
Terminal Form :
Gull wing
Mount :
Surface Mount
Continuous Drain Current (ID) :
10A
REACH SVHC :
No SVHC
Vgs(th) (Max) @ Id :
2V @ 250μA
Mounting Type :
Surface Mount
Width :
6.1mm
Case Connection :
DRAIN
Lead Free :
Lead Free
Rds On (Max) @ Id, Vgs :
180m Ω @ 5A, 10V
Operating Temperature :
-55°C~150°C TJ
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 5V
JESD-30 Code :
R-PSSO-G2
Turn On Delay Time :
7.5 ns
ECCN Code :
EAR99
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Threshold Voltage :
2V
Operating Mode :
ENHANCEMENT MODE
Current Rating :
10A
Drain to Source Breakdown Voltage :
100V
Rise Time :
220ns
Number of Pins :
3
Lifecycle Status :
ACTIVE (Last Updated: 1 day ago)
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQD13N10LTM from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63, Number of Terminations:2, Mounting Type:Surface Mount, Operating Temperature:-55°C~150°C TJ, Number of Pins:3, FQD13N10LTM pinout, FQD13N10LTM datasheet PDF, FQD13N10LTM amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor FQD13N10LTM ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor FQD13N10LTM


N-Channel Tape & Reel (TR) 180m Ω @ 5A, 10V ±20V 520pF @ 25V 12nC @ 5V TO-252-3, DPak (2 Leads + Tab), SC-63

FQD13N10LTM Description


A patented planar stripe and DMOS technology are used to create the FQD13N10LTM N-Channel enhancement mode power MOSFET. This sophisticated MOSFET technology has been specifically developed to lower on-state resistance, improve switching performance, and increase avalanche energy strength. Switched-mode power supply, audio amplifiers, DC motor control, and variable switching power applications are all possible with these devices.



FQD13N10LTM Features


  • Low Crss ( Typ. 20pF)

  • 100% avalanche tested

  • Low gate charge ( Typ. 8.7nC)

  • 10A, 100V, RDS(on) = 180mΩ(Max.) @VGS = 10 V, ID = 5A

  • Low Level Gate Drive Requirement Allowing Direct Operation Form Logic Drivers



FQD13N10LTM Applications


  • LCD TV

  • LED TV

  • Power supplies

  • Audio amplifier

  • Switching power applications


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